Abstract: Semiconductor wafers composed of silicon with an epitaxially deposited layer, are prepared by: placing a dummy wafer on a susceptor of an epitaxy reactor; conducting an etching gas through the epitaxy reactor in order to remove residues on surfaces in the epitaxy reactor through the action of the etching gas; conducting a first deposition gas through the epitaxy reactor in order to deposit silicon on surfaces in the epitaxy reactor; replacing the dummy wafer by a substrate wafer composed of silicon; and conducting a second deposition gas through the epitaxy reactor in order to deposit an epitaxial layer on the substrate wafer.

Abstract: A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Abstract: A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Abstract: Semiconductor wafers composed of silicon with an epitaxially deposited layer, are prepared by: placing a dummy wafer on a susceptor of an epitaxy reactor; conducting an etching gas through the epitaxy reactor in order to remove residues on surfaces in the epitaxy reactor through the action of the etching gas; conducting a first deposition gas through the epitaxy reactor in order to deposit silicon on surfaces in the epitaxy reactor; replacing the dummy wafer by a substrate wafer composed of silicon; and conducting a second deposition gas through the epitaxy reactor in order to deposit an epitaxial layer on the substrate wafer.

Abstract: A machining system having a machining envelope, a housing, a hopper, and a seal. The housing defines at least a portion of the machining envelope. The hopper has a top surface defining an opening. The seal is disposed between the housing and the top surface. The hopper is configured to receive particulates when positioned below the machining envelope.

Abstract: A machining system having a machining envelope, a housing, a hopper, and a seal. The housing defines at least a portion of the machining envelope. The hopper has a top surface defining an opening. The seal is disposed between the housing and the top surface. The hopper is configured to receive particulates when positioned below the machining envelope.

Abstract: An ionizing device generates ionizing lines to shape solvent borne coating material being dispersed from an electrostatic rotary atomizer. A band having a clamping element affixes the device to the electrostatic rotary atomizer. A halo is affixed to the band by at least one support arm. The halo includes a plurality of generally conical members spaced therearound, each generating ionic lines to shape the atomized coating material being dispersed from the rotary atomizer. A shroud is positioned around each of the generally conical members to shape the ionizing lines being generated to form an ionic field to improve the transfer efficiency of the electrostatic rotary atomizer.

Abstract: An ionizing device generates ionizing lines to shape solvent borne coating material being dispersed from an electrostatic rotary atomizer. A band having a clamping element affixes the device to the electrostatic rotary atomizer. A halo is affixed to the band by at least one support arm. The halo includes a plurality of generally conical members spaced therearound, each generating ionic lines to shape the atomized coating material being dispersed from the rotary atomizer. A shroud is positioned around each of the generally conical members to shape the ionizing lines being generated to form an ionic field to improve the transfer efficiency of the electrostatic rotary atomizer.