Abstract: The present invention relates to a device comprising a cassette (1) having an opening (2) in an axial direction of the cassette (1) and a support surface (3) transverse to the axial direction and extending around the opening (2) of the cassette (1), the cassette (1) being capable of receiving a cup in the opening with a outwardly extending flange of the cup supported by the support surface (3), and a supporting plate (4) having an opening in a normal direction of the supporting plate (4), wherein the cassette (1) comprises a resilient or flexible material, and a slot in which a part of the supporting plate (4) is received in close contact without cavities.

Abstract: An Al2O3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10?6/K to 16*10?6/K, in particular from 8.5*10?6/K to 14*10?6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.

Abstract: The present invention relates to a device comprising a cassette (1) having an opening (2) in an axial direction of the cassette (1) and a support surface (3) transverse to the axial direction and extending around the opening (2) of the cassette (1), the cassette (1) being capable of receiving a cup in the opening with a outwardly extending flange of the cup supported by the support surface (3), and a supporting plate (4) having an opening in a normal direction of the supporting plate (4), wherein the cassette (1) comprises a resilient or flexible material, and a slot in which a part of the supporting plate (4) is received in close contact without cavities.

Abstract: An Al2O3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10?6/K to 16*10?6/K, in particular from 8.5*10?6/K to 14*10?6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.

Abstract: A temperature sensor, particularly a high-temperature sensor, is provided in which an MI line or a heat-decoupling wire is arranged between the measurement resistor (chip) and the supply-line cable. Springs are stuck on the strands of the MI line, whereby the contacting to the measurement resistor is realized, or the heat-decoupling wire is stretched on one side to the end facing the measurement resistor and is connected elastically on the other end to the supply-line cable.

Abstract: For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.

Abstract: A temperature sensor, particularly a high-temperature sensor, is provided in which an MI line or a heat-decoupling wire is arranged between the measurement resistor (chip) and the supply-line cable. Springs are stuck on the strands of the MI line, whereby the contacting to the measurement resistor is realized, or the heat-decoupling wire is stretched on one side to the end facing the measurement resistor and is connected elastically on the other end to the supply-line cable.

Abstract: For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750° C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850° C. or above.

Abstract: A temperature sensor is provided with a temperature-sensitive element on a surface of a monocrystalline substrate, wherein the temperature-sensitive element is made of a platinum thin-film resistor and is produced as an epitaxial layer. The monocrystalline substrate can be an electrically insulating material, preferably &agr;-Al2O3 or MgO. Alternatively, the substrate may be an electrically conducting material, such as silicon, with an electrically insulating epitaxial layer arranged between the substrate and the platinum thin-film resistor. The platinum thin-film resistor epitaxial layer is preferably deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE).

Abstract: A temperature sensor is provided with a temperature-sensitive element on a surface of a monocrystalline substrate, wherein the temperature-sensitive element is made of a platinum thin-film resistor and is produced as an epitaxial layer. The monocrystalline substrate can be an electrically insulating material, preferably &agr;-Al2O3 or MgO. Alternatively, the substrate may be an electrically conducting material, such as silicon, with an electrically insulating epitaxial layer arranged between the substrate and the platinum thin-film resistor. The platinum thin-film resistor epitaxial layer is preferably deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE).

Abstract: An electrical resistor has a resistance layer containing platinum or a platinum group metal, which is applied to an electrically insulating surface of a substrate, wherein the resistance layer is constructed as a thin layer element and is made of a physical mixture of finely dispersed ceramic and metal. Preferably, the ratio of finely dispersed ceramic to metal lies in a range of about 5 to 50% by weight. Preferably, the finely dispersed ceramic is selected from SiO, Sio2, Ta2O5, MgO, Al2O3, and mixtures thereof. The resistor is used as a reference resistor in a sensor (temperature sensor) together with a temperature-dependent measuring resistor, wherein both resistors are arranged on a common substrate.

Abstract: A process and apparatus for producing a laminate containing a metal foil strip and a plastic film strip, in which the two strips have stamped structures repeated at regular intervals in the longitudinal direction of the strips and are disposed at contiguous points in the laminate, a pre-stamped strip and the second strip being continuously joined together from one end.

Abstract: A process and apparatus for producing a laminate containing a metal foil strip and a plastic film strip, in which the two strips have stamped structures repeated at regular intervals in the longitudinal direction of the strips and are disposed at contiguous points in the laminate, a pre-stamped strip and the second strip being continuously joined together from one end.

Abstract: Waste materials containing significant quantities of zinc oxide are mixed with carbon and a sufficient amount of copper to set the overall Zn/Cu weight ratio to a selected value below 0.66. The mixture is loaded into the top of a shaft furnace having a lower region which is heated. Hot gas rising from lower regions of the shaft furnace preheats the mixture as it descends. Rising zinc vapor is prevented from escaping the furnace because it condenses in the relatively cool preheated mixture descending down the furnace. As the mixture descends, it enters a brass production zone where zinc vapor alloys with the copper in the mixture. Further descent brings the mixture to a zinc reduction zone where the temperature is above 950.degree. C and where ZnO is reduced by carbon or carbon monoxide to produce a zinc vapor which rises coutercurrently to the charge. Molten brass and some slag is removed from a brass reservoir which forms in the bottom of the furnace.