Abstract: A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm·cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm·cm. The invention also relates to a method for producing such a semiconductor structure.

Abstract: A vibration sensor for measuring a vital periodic signal from an individual comprises: —a stack of layers including an active layer made of piezoelectric material and two contact electrodes arranged on the active layer, the active layer having a thickness less than or equal to 20 microns and a Young's modulus greater than or equal to 60 GPa; —a flexible support layer including a printed circuit comprising two electrical terminals; and—an electrical connection layer arranged between the stack and the support layer for connecting each electrode to a terminal.

Abstract: A device for measuring at least one periodic vital signal from an individual, intended to be attached to a safety apparatus of a vehicle so as to be arranged between the individual and the apparatus, the device comprising: a vibration sensor comprising: a stack of layers and including an active layer made of piezoelectric material and two contact electrodes arranged on at least one face of the active layer, a flexible support layer including a printed circuit comprising two electrical terminals, the support layer being intended to be arranged on the individual, an electrical connection layer, arranged between the stack of layers and the support layer, for connecting each contact electrode to an electrical terminal, an acoustic attenuation member intended to be arranged between the safety apparatus and the vibration sensor, the member being integral with the support layer and arranged above and spaced apart from the stack of layers.

Abstract: A device for measuring at least one periodic vital signal from an individual, intended to be attached to a safety apparatus of a vehicle so as to be arranged between the individual and the apparatus, the device comprising: a vibration sensor comprising: a stack of layers and including an active layer made of piezoelectric material and two contact electrodes arranged on at least one face of the active layer, a flexible support layer including a printed circuit comprising two electrical terminals, the support layer being intended to be arranged on the individual, an electrical connection layer, arranged between the stack of layers and the support layer, for connecting each contact electrode to an electrical terminal, an acoustic attenuation member intended to be arranged between the safety apparatus and the vibration sensor, the member being integral with the support layer and arranged above and spaced apart from the stack of layers.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

Abstract: A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm.cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm.cm. The invention also relates to a method for producing such a semiconductor structure.

Abstract: Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.