Abstract: A metal etch processing sequence eliminates the need to use an organic masking layer solvent and etches a portion of an insulating layer after a plasma metal etching step. The etch of the insulating layer is performed with an etching solution that may include 1,2-ethanediol, hydrogen fluoride, and ammonium fluoride. The etching solution etches in a range of 100-900 angstroms of the insulating layer. The etch removes at least 75 percent of the mobile ions within the insulating layer, and should remove at least 95 percent of the mobile ions. The process may be implemented using an acid hood, an acid compatible spray tool, or a puddle processing tool. The process includes many different embodiments that allow the process to be easily integrated into many different existing processing sequences. A similar process may be used with a resist-etch-back processing sequence.