Patents by Inventor Thomas M. Cameron

Thomas M. Cameron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9929014
    Abstract: A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate.
    Type: Grant
    Filed: November 22, 2014
    Date of Patent: March 27, 2018
    Assignee: Entegris, Inc.
    Inventors: Thomas M. Cameron, Emanuel I. Cooper, Sung Han
  • Patent number: 9534285
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: January 3, 2017
    Assignee: ENTEGRIS, INC.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
  • Publication number: 20160362790
    Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.
    Type: Application
    Filed: December 20, 2014
    Publication date: December 15, 2016
    Applicant: ENTEGRIS, INC.
    Inventors: Thomas M. Cameron, William Hunks
  • Publication number: 20160343795
    Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t-AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCl4; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4-x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.
    Type: Application
    Filed: May 21, 2016
    Publication date: November 24, 2016
    Applicant: Entegris, Inc.
    Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
  • Publication number: 20160276155
    Abstract: A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate.
    Type: Application
    Filed: November 22, 2014
    Publication date: September 22, 2016
    Applicant: Entegris, Inc.
    Inventors: Thomas M. Cameron, Emanuel I. Cooper, Sung Han
  • Patent number: 9443736
    Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO2, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: September 13, 2016
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas M. Cameron, Susan V. DiMeo, Bryan C. Hendrix, Weimin Li
  • Patent number: 9373677
    Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4;TiCl4; tBuN?Nb(NEt2)3; tBuN?Nb(NMe2)3; t-BuN?Nb(NEtMe)3; t-AmN?Nb(NEt2)3; t-AmN?Nb(NEtMe)3; t-AmN?Nb(NMe2)3; t-AmN?Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: June 21, 2016
    Assignee: ENTEGRIS, INC.
    Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
  • Publication number: 20150147824
    Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of Si02, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.
    Type: Application
    Filed: May 22, 2013
    Publication date: May 28, 2015
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Thomas M. Cameron, Susan V. DiMeo, Bryan C. Hendrix, Weimin Li
  • Publication number: 20140295071
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Application
    Filed: June 11, 2014
    Publication date: October 2, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 8784936
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: July 22, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 8663735
    Abstract: Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.
    Type: Grant
    Filed: February 13, 2010
    Date of Patent: March 4, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Chongying Xu, Weimin Li, Thomas M. Cameron
  • Patent number: 8574675
    Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: November 5, 2013
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jorge A. Lubguban, Jr., Thomas M. Cameron, Chongying Xu, Weimin Li
  • Publication number: 20130251918
    Abstract: Cyclopentadienyl and indenyl barium/strontium metal precursors and Lewis base adducts thereof are described. Such precursors have utility for forming Ba- and/or Sr-containing films on substrates, in the manufacture of microelectronic devices or structures.
    Type: Application
    Filed: May 13, 2013
    Publication date: September 26, 2013
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Thomas M. Cameron, Chongying Xu
  • Patent number: 8524931
    Abstract: Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.
    Type: Grant
    Filed: March 12, 2007
    Date of Patent: September 3, 2013
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Chongying Xu, Bryan C. Hendrix, Thomas M. Cameron, Jeffrey F. Roeder, Matthias Stender, Tianniu Chen
  • Patent number: 8455049
    Abstract: A method of depositing a crystalline strontium titanate film on a substrate is provided, comprising carrying out an atomic layer deposition (ALD) process with strontium and titanium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium.
    Type: Grant
    Filed: August 3, 2008
    Date of Patent: June 4, 2013
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Thomas M. Cameron, Chongying Xu
  • Publication number: 20130122722
    Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN?Nb(NEt2)3; tBuN?Nb(NMe2)3; t-BuN?Nb(NEtMe)3; t-AmN?Nb(NEt2)3; t-AmN?Nb(NEtMe)3; t-AmN?Nb(NMe2)3; t-AmN?Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCU; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4.x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N?-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate.
    Type: Application
    Filed: June 23, 2011
    Publication date: May 16, 2013
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Julie Cissell, Chongying Xu, Thomas M. Cameron, William Hunks, David W. Peters
  • Patent number: 8329140
    Abstract: A method and system for storing and evolving hydrogen (H2) employ chemical compounds that can be hydrogenated to store hydrogen and dehydrogenated to evolve hydrogen. A catalyst lowers the energy required for storing and evolving hydrogen. The method and system can provide hydrogen for devices that consume hydrogen as fuel.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: December 11, 2012
    Assignee: Los Alamos National Security, LLC
    Inventors: David L. Thorn, William Tumas, P. Jeffrey Hay, Daniel E. Schwarz, Thomas M. Cameron
  • Publication number: 20120196449
    Abstract: A zirconium precursor selected from among compounds of Formulae (I), (II) and (III): wherein: M is Zr, Hf or Ti; R1 is hydrogen or C1-C5 alkyl; each of R2, R? and R? is independently selected from C1-C5 alkyl; and n has a value of 0, 1, 2, 3 or 4. Compounds of such formulae are useful in vapor deposition processes such as atomic layer deposition, to form corresponding metal-containing films, e.g., high k dielectric zirconium films in the fabrication of DRAM memory cells.
    Type: Application
    Filed: January 27, 2012
    Publication date: August 2, 2012
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Chongying Xu, Thomas M. Cameron, William Hunks
  • Patent number: 8206784
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: June 26, 2012
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum
  • Publication number: 20120141675
    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
    Type: Application
    Filed: February 9, 2012
    Publication date: June 7, 2012
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Chongying Xu, Tianniu Chen, Thomas M. Cameron, Jeffrey F. Roeder, Thomas H. Baum