Abstract: Bismuth-containing precursor compositions and a method of depositing the precursor on a substrate to form a bismuth-containing film are provided. The bismuth-containing precursor is of the formula: BiL1L2L3, wherein each of L1, L2, or L3 independently is at least one of a hydrogen, an alkyl, an alkenyl, an alkynyl, an aryl, a cycloalkyl, an alkoxy, an oxysilyl, an alkoxyalkyl, an aralkyl, a thiol, a xanthate, a thioester, an amino, an amidine, a guanidine, a carbonyl, a halogen, or any combination thereof, or at least two of L1, L2, or L3 are bonded to form a cyclic ring.

Abstract: Methods for making positive and negative tone photoresists are provided. The methods comprise obtaining a substrate comprises a bismuth and contacting the substrate with a precursor compound comprises a bismuth coordinated to at least one ligand to form a bismuth-containing film on a surface of the substrate. The at least one ligand comprises an oxygen or a sulfur. A portion of the bismuth-containing film is photo-exposed using extreme ultraviolet light to form a photo-exposed surface portion and a non-photo-exposed surface portion. To form a positive tone photoresist, the substrate is contacted with a solvent to remove the photo-exposed surface portion. To form a negative tone photoresist, the substrate is contacted with a solvent to remove the non-photo-exposed surface portion.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precursors to form films.

Abstract: The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.

Abstract: Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: Aluminum-containing inhibitor compounds for selective deposition are provided. A method for selective deposition comprises obtaining a substrate having a first surface and a second surface, exposing the substrate to an Al-containing inhibitor to modify the first surface, and selectively depositing a film on the second surface. The aluminum-containing inhibitor compound is a compound comprising a substituted aluminum alkyl. Related systems, related compositions, and related devices, among other things, are further provided.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: Multi-nuclear tin compounds and related methods are provided. A method comprises obtaining a mono-substituted tin (IV) amide compound; obtaining a silanol compound; and contacting the mono-substituted tin (IV) amide compound with the silanol compound to form a multi-nuclear tin compound. A composition comprises a multi-nuclear tin compound.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: A method of synthesis of a mono-substituted tin compound comprises contacting a stannous halide with a metalated reactant to form a stannylene compound; contacting the stannylene compound with a halide compound to form a stannic compound; and contacting the stannic compound with a reactant to form a mono-substituted tin compound via ligand exchange. A composition comprising the mono-substituted tin compound is also provided, among other compositions and methods.

Abstract: Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.

Abstract: Methods of the present disclosure include the development of a low temperature, solvent-assistant synthesis of aluminates, such as lithium tetraiodoaluminate (LiAlI4). The present disclosure includes methods of preparing a compound of formula (I): [M+q][Al(X)3I]q.

Abstract: A precursor comprises a tungsten precursor and a carbon-containing material. The precursor comprises less than 0.02% by weight of the carbon-containing material based on a total weight of the precursor. A method for purifying a tungsten precursor may comprise at least one of the following steps: obtaining a source vessel containing a tungsten precursor and a carbon-containing material; separating the tungsten precursor from at least a first portion of the carbon-containing material; recovering a precursor in a collection vessel; or any combination thereof.

Abstract: The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.