Abstract: An attachment for mounting onto a hitch receiver on a vehicle. The attachment is used for transporting a snow blower. The snow blower has wheels, an engine, a front housing and a pair of arms. The attachment comprises a drawbar. A base is supported by the drawbar. An elongate member is supported by the drawbar and has a support surface disposed above and in spaced apart relation to the base. The base is configured and arranged to support the front housing of the snow blower. The base also is configured and arranged to establish a fulcrum as the arms of the snow blower are rotated forward until the snow blower makes contact with the support surface.

Abstract: An attachment for mounting onto a hitch receiver on a vehicle. The attachment is used for transporting a snow blower. The snow blower has wheels, an engine, a front housing and a pair of arms. The attachment comprises a drawbar. A base is supported by the drawbar. An elongate member is supported by the drawbar and has a support surface disposed above and in spaced apart relation to the base. The base is configured and arranged to support the front housing of the snow blower. The base also is configured and arranged to establish a fulcrum as the arms of the snow blower are rotated forward until the snow blower makes contact with the support surface.

Abstract: A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single crystal ingot, lapped and ground, the wafer is subjected to a double side fine grinding operation, a micro-etching operation, and an annealing operation to significantly improve the quality of the front surface. To complete to process the semiconductor wafer is flash polished to impart a specular finish on the front surface. In accordance with the present invention the semiconductor wafers may also be produced having a denuded zone capable of internal gettering.

Abstract: A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single crystal ingot, lapped and ground, the wafer is subjected to a double side fine grinding operation, a micro-etching operation, and an annealing operation to significantly improve the quality of the front surface. To complete to process the semiconductor wafer is flash polished to impart a specular finish on the front surface. In accordance with the present invention the semiconductor wafers may also be produced having a denuded zone capable of internal gettering.