Abstract: Light emitting devices and techniques for using remote blue phosphors in LED lamps are disclosed. An LED lamp is formed by configuring a first plurality of n of radiation sources to emit radiation characterized by a first wavelength, the first wavelength being substantially violet, and configuring a second plurality of m of radiation sources to emit radiation characterized by a second wavelength, the second wavelength also being substantially violet. Aesthetically-pleasing white light is emitted as the light from the radiation sources interacts with various wavelength converting materials (e.g., deposits of red-emitting materials, deposits of yellow/green-emitting materials, etc.) including a blue-emitting remote wavelength converting layer configured to absorb at least a portion of the radiation emitted by the first plurality of radiation sources. The remote wavelength converting layer emits wavelengths ranging from about 420 nm to about 520 nm.

Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.

Abstract: Light emitting devices and techniques for using remote blue phosphors in LED lamps are disclosed. An LED lamp is formed by configuring a first plurality of n of radiation sources to emit radiation characterized by a first wavelength, the first wavelength being substantially violet, and configuring a second plurality of m of radiation sources to emit radiation characterized by a second wavelength, the second wavelength also being substantially violet. Aesthetically-pleasing white light is emitted as the light from the radiation sources interacts with various wavelength converting materials (e.g., deposits of red-emitting materials, deposits of yellow/green-emitting materials, etc.) including a blue-emitting remote wavelength converting layer configured to absorb at least a portion of the radiation emitted by the first plurality of radiation sources. The remote wavelength converting layer emits wavelengths ranging from about 420 nm to about 520 nm.

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract: A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

Abstract: A method for fabricating optical devices on a reusable handle substrate. The method includes providing a handle substrate having a surface region. The method also includes forming a plurality of optical device using at least an epitaxial growth process overlying the surface region and then releasing the handle substrate from the plurality of optical devices. The method reuses the handle substrate for another fabrication process.

Abstract: A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.