Abstract: An electron sensing device for receiving electrons from an output surface of an electron gain device includes a silicon die having an active surface area for positioning below the output surface of the electron gain device. An array of first bond pads is disposed on a periphery of the active surface area of the silicon die. A ceramic carrier is positioned below the silicon die, including a second array of bond pads disposed on the ceramic carrier and arranged in a substantially vertical alignment to the first array of bond pads. A plurality of conductive via holes is disposed in the ceramic carrier for electrically connecting the first array of bond pads to the second array of bond pads. When the imager is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.

Abstract: An electron sensing device for receiving electrons from an output surface of an electron gain device has a silicon die including an active surface area for positioning below the output surface of an electron gain device. The silicon die also includes a silicon step formed below and surrounding the active surface area, and a first array of bond pads formed on the silicon step for providing output signals from the silicon die. When the electron sensing device is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.