Abstract: A coupon for preparing a TEM sample holder comprises a sheet of material that includes a TEM sample holder form. There is at least one section of the sheet connecting the TEM sample holder form to other portions of the sheet. A TEM sample holder is formed by cutting the TEM sample holder form from the coupon in a press. The cutting joins the tip point of a nano-manipulator probe tip with the formed TEM sample holder. The tip point of the probe has a sample attached for inspection in a TEM.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads exposed in protective overcoat openings and one or more bondable metal layers deposited onto the bond pads by a technology which may produce some parts with off-spec or missing depositions. After identifying the wafer with off-spec metal layers, a layer of glass buffer is deposited over those wafers, which also fill any missing depositions at least partially. The glass-covered surface is then chemically-mechanically polished until the off-spec metal layers and at least portion a portion of the protective overcoat are removed, without damaging the copper metallization. Finally, a fresh layer of protective overcoat is deposited, selectively opened to expose the bond pads, and provided anew with one or more bondable metal layers.

Abstract: We disclose a method for analyzing the composition of a microscopic particle resting on a first sample surface. The method comprises positioning a micro-manipulator probe near the particle; attaching the particle to the probe; moving the probe and the attached particle away from the first sample surface; positioning the particle on a second sample surface; and, analyzing the composition of the particle on the second sample surface by energy-dispersive X-ray analysis or detection of Auger electrons. The second surface has a reduced or non-interfering background signal during analysis relative to the background signal of the first surface. We also disclose methods for adjusting the electrostatic forces and DC potentials between the probe, the particle, and the sample surfaces to effect removal of the particle, and its transfer and relocation to the second sample surface.

Abstract: We disclose a method for analyzing the composition of a microscopic particle resting on a first sample surface. The method comprises positioning a micro-manipulator probe near the particle; attaching the particle to the probe; moving the probe and the attached particle away from the first sample surface; positioning the particle on a second sample surface; and, analyzing the composition of the particle on the second sample surface by energy-dispersive X-ray analysis or detection of Auger electrons. The second surface has a reduced or non-interfering background signal during analysis relative to the background signal of the first surface. We also disclose methods for adjusting the electrostatic forces and DC potentials between the probe, the particle, and the sample surfaces to effect removal of the particle, and its transfer and relocation to the second sample surface.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads exposed in protective overcoat openings and one or more bondable metal layers deposited onto the bond pads by a technology which may produce some parts with off-spec or missing depositions. After identifying the wafer with off-spec metal layers, a layer of glass buffer is deposited over those wafers, which also fill any missing depositions at least partially. The glass-covered surface is then chemically-mechanically polished until the off-spec metal layers and at least portion of the protective overcoat are removed, without damaging the copper metallization. Finally, a fresh layer of protective overcoat is deposited, selectively opened to expose the bond pads, and provided anew with one or more bondable metal layers.

Abstract: A sample (180) is separated from an integrated circuit chip or a semiconductor wafer (100) for examination so that the resulting sample (180) can be moved to a location for examination by TEM, SEM or other means. A sample (180) portion of the chip or wafer (100) containing an area of interest is separated with a two cuts (140, 160) at two different angles (130, 170) by a focused ion-beam (120). Only after the sample (180) is separated is it fixed to a micromanipulator probe (190). The sample (180) is then moved by the probe (190) to the location for examination.

Abstract: A system for controlling a polishing machine during polishing of a workpiece, such as a semiconductor wafer, includes a carrier which has an interface surface for engaging a workpiece and establishing ultrasonic coupling thereto. At least one crystal oscillator is ultrasonically coupled to the carrier and operates at a resonant frequency in an ultrasonic band which is indicative of a desired polishing depth of the workpiece, such as the endpoint of polishing. A detector circuit provides an output signal which is representative of an output level of the crystal oscillator. A processor circuit receives the signal from the detector circuit and provides a signal to the polishing machine when the amplitude of the signal from the detector circuit indicates that the desired polishing endpoint has been reached. A number of crystal oscillators can be spatially arranged on the carrier to establish a local polishing depth detection array.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads exposed in protective overcoat openings and one or more bondable metal layers deposited onto the bond pads by a technology which may produce some parts with off-spec or missing depositions. After identifying the wafer with off-spec metal layers, a layer of glass buffer is deposited over those wafers, which also fill any missing depositions at least partially. The glass-covered surface is then chemically-mechanically polished until the off-spec metal layers and at least a portion of the protective overcoat are removed, without damaging the copper metallization. Finally, a fresh layer of protective overcoat is deposited, selectively opened to expose the bond pads, and provided anew with one or more bondable metal layers.

Abstract: A sample (180) is separated from an integrated circuit chip or a semiconductor wafer (100) for examination so that the resulting sample (180) can be moved to a location for examination by TEM, SEM or other means. A sample (180) portion of the chip or wafer (100) containing an area of interest is separated with a two cuts (140, 160) at two different angles (130, 170) by a focused ion-beam (120). Only after the sample (180) is separated is it fixed to a micromanipulator probe (190). The sample (180) is then moved by the probe (190) to the location for examination.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads covered by deposited layers of a barrier metal and a bondable metal. After identifying the wafers with off-spec metal layers, the wafers are chemically etched using selective etchants consecutively until the metal layers over the bond pads are removed without damaging the copper metallization. Replacement metal layers are finally deposited over the bond pads. Specifically, the bondable metal, such as gold, is selectively removed by a cyclic dithio-oxamine compound, dissolved in tetra-hydro-furane or acetone. The barrier metals, such as nickel and palladium, are removed by a mixture of inorganic and organic oxidizing acids.

Abstract: When a desired portion is separated from an integrated circuit chip or a semiconductor wafer, the portion is separated so that the resulting sample can be moved to a location for examination by TEM, SEM or other means. A sample portion of the chip or wafer containing an area of interest is separated with a single cut by a focused ion-beam. Prior to separation, the sample is fixed to a micromanipulator probe. The sample is moved by the probe to the location for examination and fixed there. The probe is then detached from the sample by the focused ion-beam.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads covered by deposited layers of a barrier metal and a bondable metal. After identifying the wafers with off-spec metal layers, the wafers are chemically etched using selective etchants consecutively until the metal layers over the bond pads are removed without damaging the copper metallization. Replacement metal layers are finally deposited over the bond pads. Specifically, the bondable metal, such as gold, is selectively removed by a cyclic dithio-oxamine compound, dissolved in tetra-hydro-furane or acetone. The barrier metals, such as nickel and palladium, are removed by a mixture of inorganic and organic oxidizing acids.

Abstract: A method for reworking integrated circuit (IC) wafers having copper-metallized bond pads exposed in protective overcoat openings and one or more bondable metal layers deposited onto the bond pads by a technology which may produce some parts with off-spec or missing depositions. After identifying the wafer with off-spec metal layers, a layer of glass buffer is deposited over those wafers, which also fill any missing depositions at least partially. The glass-covered surface is then chemically-mechanically polished until the off-spec metal layers and at least portion of the protective overcoat are removed, without damaging the copper metallization. Finally, a fresh layer of protective overcoat is deposited, selectively opened to expose the bond pads, and provided anew with one or more bondable metal layers.

Abstract: When a desired portion is separated from an integrated circuit chip or a semiconductor wafer, the portion is separated so that the resulting sample can be moved to a location for examination by TEM, SEM or other means. A sample portion of the chip or wafer containing an area of interest is separated with a single cut by a focused ion-beam. Prior to separation, the sample is fixed to a micromanipulator probe. The sample is moved by the probe to the location for examination and fixed there. The probe is then detached from the sample by the focused ion-beam.

Abstract: An apparatus and method are disclosed for producing acoustical reflected images from selected planes within an integrated circuit package to detect flaws within the package.

Abstract: A display system for non-destructive inspection of integrated circuit packages is disclosed for producing acoustical reflected images from selected planes within an integrated circuit package to detect flaws within the package.

Abstract: A method and apparatus is disclosed for the non-destructive measurement of die-attach quality in packaged integrated circuit. The apparatus is used in a production line and uses acoustical pulses to generate signals from within the integrated circuit indicative of the die-attach quality.

Abstract: A golf club loft and lie calibration machine has a fixture with a cavity that exactly matches the back of the golf club head for clamping the golf club head. A pin with a tapered end is inserted into the bore of the golf club's hosel. The angular displacement of the pin is mechanically converted into two components of angular displacement which components are then converted to electrical signals. The electrical signals are processed to determine the deviations from the specified loft and lie angles. The deviation is used to activate hydraulic rams distributed around the fixture to bend the golf club head's hosel and bring the golf club back to specification.

Abstract: A man transport device that is strapped to a person and has two turbo type ngines with controls for actuating devices at the turbo jet engines to control lift, roll, pitch and yaw of the device and also to utilize control of fluid through span wise slots or holes in the structure interconnecting the turbo jets to increase the lift/drag of the system and therefore increase the range attainable by this device.