Patents by Inventor Thomas Mårtensson

Thomas Mårtensson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowire growth on dissimilar material
    Patent number: 9012887
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: April 21, 2015
    Assignee: Qunano AB
    Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Method for metal-free synthesis of epitaxial semiconductor nanowires on si
    Patent number: 8691011
    Abstract: The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: April 8, 2014
    Assignee: QuNano AB
    Inventors: Lars Samuelson, Thomas Mårtensson, Werner Seifert, Anders Mikkelsen, Bernhard Mandl
  • NANOWIRE GROWTH ON DISSIMILAR MATERIAL
    Publication number: 20120145990
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Application
    Filed: October 24, 2011
    Publication date: June 14, 2012
    Inventors: Lars SAMUELSON, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Growth of III-V compound semiconductor nanowires on silicon substrates
    Patent number: 8084337
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: December 27, 2011
    Assignee: QuNano AB
    Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • NANOWIRE GROWTH ON DISSIMILAR MATERIAL
    Publication number: 20100252808
    Abstract: The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
    Type: Application
    Filed: October 27, 2008
    Publication date: October 7, 2010
    Inventors: Lars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
  • Method for Metal-Free Synthesis of Epitaxial Semiconductor Nanowires on Si
    Publication number: 20090301389
    Abstract: The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
    Type: Application
    Filed: March 7, 2007
    Publication date: December 10, 2009
    Inventors: Lars Samuelson, Thomas Mårtensson, Werner Seifert, Anders Mikkelsen, Bernhard Mandl