Patents by Inventor Thomas M. Sharpe

Thomas M. Sharpe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6882247
    Abstract: A filtered button DC interconnect employing a compressible conductor such as a finely wound wire mesh imbedded within a series of dielectric and ferrite cylinders. The compressible conductor is captivated within the series of dielectric and ferrite cylinders to ensure proper contact with mating surfaces of interconnected circuits. The interconnect serves as an RF filter by providing rejection of RF and microwave frequencies between the interconnected circuits.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: April 19, 2005
    Assignee: Raytheon Company
    Inventors: Robert C. Allison, Jerold K. Rowland, Thomas M. Sharpe
  • Publication number: 20030214370
    Abstract: A filtered button DC interconnect employing a compressible conductor such as a finely wound wire mesh imbedded within a series of dielectric and ferrite cylinders. The compressible conductor is captivated within the series of dielectric and ferrite cylinders to ensure proper contact with mating surfaces of interconnected circuits. The interconnect serves as an RF filter by providing rejection of RF and microwave frequencies between the interconnected circuits.
    Type: Application
    Filed: May 15, 2002
    Publication date: November 20, 2003
    Inventors: Robert C. Allison, Jerold K. Rowland, Thomas M. Sharpe
  • Patent number: 6552626
    Abstract: A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.
    Type: Grant
    Filed: January 12, 2000
    Date of Patent: April 22, 2003
    Assignee: Raytheon Company
    Inventors: Thomas M. Sharpe, Donald A. Charlton, Richard W. Burns
  • Publication number: 20020118076
    Abstract: A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.
    Type: Application
    Filed: January 12, 2000
    Publication date: August 29, 2002
    Inventors: Thomas M Sharpe, Donald A. Charlton, Richard W. Burns