Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

Abstract: A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.

Abstract: A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.

Abstract: A method for forming for inhibiting the buildup of cerlum-containing deposits in a process tool is disclosed. The method involves spraying a solution of a dilute acid, preferably nitric or perchloric acid, through the chamber and bowl rinse nozzles of the process tool. The method is less time consuming than previous methods for inhibiting the buildup of cerium-containing deposits and can be conveniently carried out at the end of every shift.

Abstract: A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.

Abstract: A method for removing contaminants from a substrate surface having a pattern formed on the surface. The method involves rinsing the substrate and pattern with water to remove acid reactive material. The substrate and pattern are then washed with an acid whose concentration is too low to attack the material that forms the pattern. Then the substrate is washed with water to remove the acid.

Abstract: A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.

Abstract: A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.

Abstract: A method for positioning an added length of wire in a drill string is set forth, and it is especially intended for use in drilling a slant hole, as typically occurs to drill under a river, or under other surface obstacles. A cartridge is disclosed; it has an upper flange at one end, a hook or eyelet across the flange to engage a hook and line for pulling the cartridge along the drill string, and further includes latching means for latching the cartridge at a specified location in a drill string. It further includes a spool for storage of wire, and the wire extends from an annular space for storage and the annular space is defined by a pair on concentric cylindrical sleeves. A method of use is also set forth wherein the cartridge is moved from drill pipe joint to joint and supports an elongate wire which is spooled therearound and which is pulled from the spool position. The wire, on emerging, encounters frictional drag to assure that only the wire length necessary is spooled out of the device.

Abstract: A call queue release control circuit for automatic toll switchboards is disclosed. The call queue release control circuit is supervised by a plurality of multi-position switches that are set in accordance with decisions made at a chief operator position as to the number of different types of calls to be released in an allocation chain. Individual numbers of calls to be released are loaded through guarded inputs into separate presettable counter circuits associated with the type of call to be released. A sequencing circuit addresses the plurality of counter circuits in succession to form the allocation chain. As a particular counter circuit is addressed, the sequencing circuit provides an enabling signal to a call queue control circuit for releasing the type of call associated therewith and receives from the call queue control circuit a confirmation signal for every call released.