Abstract: A method and system for clearing payment card transactions using a computer device coupled to a database are provided. The method includes receiving from one or more local clearing users, financial transaction data relating to purchases made at one or more merchants by a plurality of payment card cardholder, the local clearing users located within a single clearing region, checking the received financial transaction data for errors, and performing a batch clearing process within the single clearing region on financial transaction data received in a predetermined period from the local clearing users within the single clearing region.

Abstract: The present invention provides a method for manufacturing an interconnect and a method for manufacturing an integrated circuit including the interconnect. The method of manufacturing an interconnect, among other steps, includes forming a via (160) in a substrate (130) and then forming a base getter material (210) in the via (160). The method further includes forming a photoresist layer (410) over the base getter material (210), the photoresist layer (410) having an opening (420) therein positioned over the via (160), and etching a trench (510) into the substrate (130) using the opening (420) in the photoresist layer (410).

Abstract: The present invention provides a method for manufacturing an interconnect and a method for manufacturing an integrated circuit including the interconnect. The method of manufacturing an interconnect, among other steps, includes forming a via (160) in a substrate (130) and then forming a base getter material (210) in the via (160). The method further includes forming a photoresist layer (410) over the base getter material (210), the photoresist layer (410) having an opening (420) therein positioned over the via (160), and etching a trench (510) into the substrate (130) using the opening (420) in the photoresist layer (410).

Abstract: A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.

Abstract: In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern.

Abstract: Regression of established malignant tumors in rats, mice and hamsters is achieved with a combination of the heparin fragment hexuronyl hexosaminoglycan sulfate (HHS) together with a steroid such as hydrocortisone. HHS is clinically useful for its antineoplastic, inhibiting effects in tumor systems in rats, mice and hamsters.