Abstract: Traditionally, sol-gel silicates have been reported as being high temperature processable at 400 C to give reasonably dense films that showed good leakage current densities (<5×10?8 A/cm2). Recently we have discovered that we are able to prepare films from particular combinations of sol-gel silicate precursors that cure at 135° C. to 250° C. and give good leakage current density values (9×10?9 A/cm2 to 1×10?10 A/cm2) as well, despite the decrease in processing temperatures. These are some of the first examples of silicates being cured at lower temperatures where the leakage current density is sufficient low to be used as low temperature processed or solution processable or printable gate dielectrics for flexible or lightweight thin film transistors. These formulations may also be used in the planarization of stainless steel foils for thin film transistors and other electronic devices.

Abstract: A photodefinable, organosilicate material having a dielectric constant (?) of 3.5 or below and a method for making and using same, for example, in an electronic device, is described herein. In one aspect, there is provided a composition for preparing a photodefinable material comprising: a silica source capable of being sol-gel processed and having a molar ratio of carbon to silicon within the silica source contained therein of at least 0.5 or greater; a photoactive compound; optionally a solvent; and water provided the composition contains 0.1% by weight or less of an added acid where the acid has a molecular weight of 500 or less.

Abstract: The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors.

Abstract: Water soluble, gelatin-free dip coatings for pharmaceutical solid dosage forms such as tablets comprising HPMC and xanthan gum, carrageenan, and mixtures thereof, or HPMC and castor oil or maltodextrin.

Abstract: A method for making a rigid polyurethane foam by reacting a polyisocyanate and a polyol in the presence of a urethane catalyst, a blowing agent and a silicone surfactant characterized by employing a blowing agent comprising a C4 or C5 hydrocarbon, or mixtures thereof, with an average molecular weight of ?72 g/mole and a boiling point in the range of 27.8 to 50 ° C., and a silicone surfactant comprising a polyether-polysiloxane copolymer represented by the following formula: (CH3)3—Si—O—(Si(CH3)2—O)x—(Si(CH3)(R)O)y—Si(CH3)3 where R?(CH2)3—O—(—CH2—CH2—O)a—(CH2—CH(CH3)—O)b—R?, and where R? is H, (CH2)ZCH3, or C(O)CH3; x+y+2 is 60-130; x/y is 5-14; z is 0-4; the total surfactant molecular weight, based on the formula, is 7000-30,000 g/mole, the wt % siloxane in the surfactant is 32-70 wt %, the blend average molecular weight (BAMW) of the polyether portion is 450-1000 g/mole, and the mole % of ethylene oxide in the polyether portion is 70-100 mole %.

Abstract: Disclosed herein is a fluorinated bridged carbocyclic compound that can be polymerized by itself or with at least one other ethylenically unsaturated monomer to provide a polymer. The polymer may be used, for example, within a sub-300 nm photoresist composition. Also disclosed is a method to make the bridged carbocyclic compound.