Abstract: A measurement mark on a substrate has a first section with first primary and first secondary lines. The first primary lines have a first width and are arranged at a first pitch and in alternating order with the first secondary lines. A second section comprises second primary and second secondary lines arranged in alternating order. The second primary lines have a second width that is different from the first width. The pitch of the primary lines and the distance between the primary and the secondary lines is the same in each case. The spectral response of both sections of the measurement mark is determined by an analyzer unit of a measurement apparatus, and a sign of a difference between target and actual widths of the lines is determined by comparing a first spectrum derived from the first section with a second spectrum derived from the second section.

Abstract: A method includes measuring spectral responses of at least first and second sections of a measurement mark. In the first section, individual ones of primary lines of a first width are arranged at a first pitch and in alternating order with secondary lines spaced from the primary lines at a first distance. In the second section, individual ones of further primary lines of a second, different width are arranged at the first pitch and in alternating order with further secondary lines that are spaced from the further primary lines at the first distance. From at least the first and second spectra, information on a difference between target and actual widths of the primary and secondary lines may be obtained.

Abstract: A method for testing the generation of scattered light by photolithographic imaging devices is disclosed. In one embodiment, measuring structures that are to be imaged in a photoresist are provided in the vicinity of deliberately structured sections that cause scattered light in the imaging device to be tested, in a photomask. The scattered light which is caused as a function of the configuration of the sections acts on the measurement structures in the photoresist and leads to changes in their CD, which is measured in the photoresist, and allows conclusions to be drawn about the scattered-light behavior of the imaging device. The method is suitable for specifically testing the lens system of the imaging device.