Abstract: A method for tuning a purge system of a barrel reactor used for chemical vapor deposition of layers of material on semiconductor wafers includes placement of rotameters and adjustable flow-control valves in each of multiple purge lines. The flow rates of purge gas in the lines are monitored and the valves adjusted to make sure that the flow is all in a direction toward the barrel reactor, so that there is no siphon effect to draw reactant gases into the purge system. The oxygen presence in the barrel reactor is also monitored and the flow rates adjusted to reduce the oxygen presence. The flow rates are adjusted to assure full purge of reactant gases from the barrel reactor after a chemical vapor deposition cycle is complete. Reduced levels of metals contamination in layers of deposited material are achieved.

Abstract: A reactor for depositing a material on a semiconductor wafer by a chemical vapor deposition process using a reactant gas. The reactor includes a shell defining a reaction chamber sized to receive at least one semiconductor wafer. The shell has a jet port cavity opening into the reaction chamber and extending away from the reaction chamber. The reactor also includes a reactant gas delivery system for delivering the reactant gas to the reaction chamber. The reactant gas delivery system includes a nozzle positioned within the jet port cavity for directing the reactant gas into the reaction chamber, a reactant gas source, and a reactant gas line extending between the reactant gas source and the nozzle. The reactor also includes a purge gas delivery system for delivering a purge gas to the reaction chamber.