Patents by Inventor Thomas Mcarraoll Shaw

Thomas Mcarraoll Shaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040195694
    Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits. good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
    Type: Application
    Filed: April 23, 2004
    Publication date: October 7, 2004
    Applicant: International Business Machines Corporation
    Inventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
  • Patent number: 6777809
    Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
    Type: Grant
    Filed: December 19, 2002
    Date of Patent: August 17, 2004
    Assignee: International Business Machines Corporation
    Inventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
  • Publication number: 20030089943
    Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
    Type: Application
    Filed: December 19, 2002
    Publication date: May 15, 2003
    Applicant: International Business Machines Corporation
    Inventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
  • Patent number: 6525427
    Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
    Type: Grant
    Filed: January 22, 2002
    Date of Patent: February 25, 2003
    Assignee: International Business Machines Corporation
    Inventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
  • Publication number: 20010013660
    Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
    Type: Application
    Filed: January 4, 1999
    Publication date: August 16, 2001
    Inventors: PETER RICHARD DUNCOMBE, DANIEL CHARLES EDELSTEIN, ROBERT BENJAMIN LAIBOWITZ, DEBORAH ANN NEUMAYER, TAK HUNG NING, ROBERT ROSENBERG, THOMAS MCARRAOLL SHAW
  • Patent number: 6172385
    Abstract: Multilayer ferroelectric capacitor structures comprising a ferroelectric film having a combination of different ferroelectric materials or compositions such as strontium bismuth tantalate, strontium bismuth niobate, bismuth titanate, strontium bismuth tantalate niobate, lead zirconate titanate, lead lanthanum zirconate titanate are disclosed. A method of preparing the multilayer ferroelectric film containing at least two different ferroelectric materials and/or more than one composition of ferroelectric material is also disclosed.
    Type: Grant
    Filed: October 30, 1998
    Date of Patent: January 9, 2001
    Assignee: International Business Machines Corporation
    Inventors: Peter Richard Duncombe, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Katherine Lynn Saenger, Thomas Mcarraoll Shaw