Patents by Inventor Thomas Mele

Thomas Mele has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7488690
    Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: February 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Andrew M. Lam, Yuji Maeda, Thomas Mele, Jacob W. Smith, Sean M. Seutter, Sanjeev Tandon, Randhir P. Singh Thakur, Sunderraj Thirupapuliyur
  • Publication number: 20060286818
    Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.
    Type: Application
    Filed: June 17, 2005
    Publication date: December 21, 2006
    Inventors: Yaxin Wang, Yuji Maeda, Thomas Mele, Sean Seutter, Sanjeev Tandon, R. Iyer
  • Publication number: 20060009041
    Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
    Type: Application
    Filed: July 6, 2004
    Publication date: January 12, 2006
    Inventors: R. Iyer, Andrew Lam, Yuji Maeda, Thomas Mele, Faran Nouri, Jacob Smith, Sean Seutter, Sanjeev Tandon, Randhir Singh Thakur, Sunderraj Thirupapuliyur