Abstract: A method includes providing a semiconductor structure and forming a plurality of gate structures over the semiconductor structure. The formation of the plurality of gate structures includes a first patterning process. The first patterning process includes a first photoresist exposure process and a second photoresist exposure process. In the first photoresist exposure process, a first photomask and a first illumination source pattern are used. The first photomask is adapted for providing a first gate cut photoresist pattern over a first area of the semiconductor structure. In the second photoresist exposure process, a second photomask and a second illumination source pattern that is different from the first illumination source pattern are used. The second photomask is adapted for providing a second gate cut photoresist pattern over a second area of the semiconductor structure.

Abstract: A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the source and/or in the drain of the FinFET. One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique to the pass-gate transistors, which leads to a reduction of the drive strength of the pass-gate transistors relative to the drive strength of the pull-up and pull-down transistors, results in improved SRAM cell performance.

Abstract: A device and method of fabricating the same are disclosed. In an example, a device includes a first fin Field Effect Transistors (finFET) formed on a substrate. The first finFET including a fin formed on the substrate. The device further includes a second finFET formed on the substrate. The first finFET and the second finFET share the fin and wherein the first finFET is without any low density doped (LDD) extension region in the substrate and wherein the second FinFET is associated with a first LDD extension region formed in the substrate such that a drive strength of the second finFET is greater relative to a drive strength of the first finFET.

Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.

Abstract: A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the source and/or in the drain of the FinFET. One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique to the pass-gate transistors, which leads to a reduction of the drive strength of the pass-gate transistors relative to the drive strength of the pull-up and pull-down transistors, results in improved SRAM cell performance.

Abstract: A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the source and/or in the drain of the FinFET. One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique to the pass-gate transistors, which leads to a reduction of the drive strength of the pass-gate transistors relative to the drive strength of the pull-up and pull-down transistors, results in improved SRAM cell performance.

Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.

Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.

Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.

Abstract: A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the source and/or in the drain of the FinFET. One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique to the pass-gate transistors, which leads to a reduction of the drive strength of the pass-gate transistors relative to the drive strength of the pull-up and pull-down transistors, results in improved SRAM cell performance.

Abstract: A device for bio-sensing applications is disclosed, comprising a substrate such as a semiconductor chip having Cu electrodes thereon, and a self assembled monolayer bonded to at least one of the Cu electrodes, wherein molecules of the self-assembled monolayer comprise a head group which bonds to Cu, a carbon-comprising chain comprising a chain of at least 12 C atoms, and a terminal group which is hydrophilic and for binding a bio-receptor. The terminal group is hydrophilic to allow binding to the bio-receptor, and inclusion of the carbon-comprising chain, limits or avoids corrosion of the copper. Also disclosed is a method of providing such a device, activating the terminal group and coupling a bio-receptor to the activated terminal group. Disclosure further extends to use of such a device for bio-sensing applications.

Abstract: A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the source and/or in the drain of the FinFET. One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique to the pass-gate transistors, which leads to a reduction of the drive strength of the pass-gate transistors relative to the drive strength of the pull-up and pull-down transistors, results in improved SRAM cell performance.