Abstract: Various embodiments of a voltage detection device and of related safety systems are provided. In various embodiments, the voltage detection device is configured to couple to safety headwear, such as via the one or more housing(s) of the voltage detection device coupling directly to the safety headwear or the voltage detection device coupling to an adaptor mounted to the hard hat.

Abstract: In a feature layer of a semiconductor wafer, dummy tiles which overcome the tendency of dishing and erosion to occur during a CMP process are placed with various sizes and in various positions. An isolation zone is provided around active features. A scanning process of the feature layout surveys oxide density and nitride density over the wafer layer outside of said isolation zone. Values of the ratios of oxide/nitride density for two or more length scales which define tiling zones, are calculated. Tile placement and sizing in the zones is dependent upon the oxide/nitride density ratio values; and further upon an oxide deposition model specific to the oxide used in the fabrication process and upon a polishing model of the CMP process being employed.