Abstract: A semiconductor device includes a first metal layer including a plurality of first ground wire pairs alternating with a plurality of first power wire pairs and a second metal layer including a plurality of second ground wire pairs alternating with a plurality of second power wire pairs. A metal-insulator-metal capacitor (MIMCAP) is between the first metal layer and the second metal layer. A group of ground vias connects a pair of the first ground wire pairs with a pair of the second ground wire pairs. The group of ground vias can also connect to a ground plate of the MIMCAP. A group of power vias connects a pair of the first power wire pairs with a pair of the second power wire pairs. The group of power vias can also connect to a power plate of the MIMCAP. Various other methods and systems are also disclosed.

Abstract: A semiconductor device includes a first metal layer including a plurality of first ground wire pairs alternating with a plurality of first power wire pairs and a second metal layer including a plurality of second ground wire pairs alternating with a plurality of second power wire pairs. A metal-insulator-metal capacitor (MIMCAP) is between the first metal layer and the second metal layer. A group of ground vias connects a pair of the first ground wire pairs with a pair of the second ground wire pairs. The group of ground vias can also connect to a ground plate of the MIMCAP. A group of power vias connects a pair of the first power wire pairs with a pair of the second power wire pairs. The group of power vias can also connect to a power plate of the MIMCAP. Various other methods and systems are also disclosed.