Patents by Inventor Thomas N. Adam

Thomas N. Adam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7119416
    Abstract: The invention includes methods of fabricating a bipolar transistor that adds a silicon germanium (SiGe) layer or a third insulator layer of, e.g., high pressure oxide (HIPOX), atop an emitter cap adjacent the intrinsic base prior to forming a link-up layer. This addition allows for removal of the link-up layer using wet etch chemistries to remove the excess SiGe or third insulator layer formed atop the emitter cap without using oxidation. In this case, an oxide section (formed by deposition of an oxide or segregation of the above-mentioned HIPOX layer) and nitride spacer can be used to form the emitter-base isolation. The invention results in lower thermal cycle, lower stress levels, and more control over the emitter cap layer thickness, which are drawbacks of the first embodiment. The invention also includes the resulting bipolar transistor structure.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: October 10, 2006
    Assignee: International Business Machines Corporation
    Inventors: Thomas N. Adam, Kevin K. Chan, Alvin J. Joseph, Marwan H. Khater, Qizhi Liu, Beth Ann Rainey, Kathryn T. Schonenberg
  • Patent number: 7057250
    Abstract: A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 ?m to 3000 ?m. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: June 6, 2006
    Assignee: University of Delaware
    Inventors: James Kolodzey, Thomas N. Adam, Dennis W. Prather
  • Patent number: 7037798
    Abstract: The invention includes methods of fabricating a bipolar transistor that adds a silicon germanium (SiGe) layer or a third insulator layer of, e.g., high pressure oxide (HIPOX), atop an emitter cap adjacent the intrinsic base prior to forming a link-up layer. This addition allows for removal of the link-up layer using wet etch chemistries to remove the excess SiGe or third insulator layer formed atop the emitter cap without using oxidation. In this case, an oxide section (formed by deposition of an oxide or segregation of the above-mentioned HIPOX layer) and nitride spacer can be used to form the emitter-base isolation. The invention results in lower thermal cycle, lower stress levels, and more control over the emitter cap layer thickness, which are drawbacks of the first embodiment. The invention also includes the resulting bipolar transistor structure.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: May 2, 2006
    Assignee: International Business Machines Corporation
    Inventors: Thomas N. Adam, Kevin K. Chan, Alvin J. Joseph, Marwan H. Khater, Qizhi Liu, Beth Ann Rainey, Kathryn T. Schonenberg
  • Publication number: 20040228371
    Abstract: An electrically-pumped terahertz (THz) frequency radiation source (or detector), including an optical gain (or absorption) material with two electrodes electrically coupled to the optical gain material. The optical gain (or absorption) material is formed substantially of at least one group IV element and doped with at least one dopant, which has an intra-center transition frequency in a range of about 0.3 THz to 30 THz. Also, a method of manufacturing electrically-pumped THz frequency radiation sources (or detectors).
    Type: Application
    Filed: April 7, 2004
    Publication date: November 18, 2004
    Inventors: James Kolodzey, Samit Kumar Ray, Thomas N. Adam, Pengcheng Lv, Ralph Thomas Troeger, Miron S. Kagan, Irina N. Yassievich, Maxim A. Odnoblyudov
  • Publication number: 20040227089
    Abstract: A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 &mgr;m to 3000 &mgr;m. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.
    Type: Application
    Filed: April 8, 2004
    Publication date: November 18, 2004
    Inventors: James Kolodzey, Thomas N. Adam, Dennis W. Prather