Patents by Inventor Thomas N. Melody

Thomas N. Melody has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of decreasing contact resistance between a lower elevation aluminum layer and a higher elevation electrically conductive layer
    Patent number: 5200359
    Abstract: A semiconductor processing method for decreasing electrical contact resistance between different elevation electrically conductive layers is disclosed. The method includes applying an aluminum layer atop a partially processed semiconductor wafer, with the aluminum layer having a defined upper surface. The semiconductor wafer with applied aluminum layer is exposed to an oxidizing atmosphere, forming an electrically resistive aluminum oxide at the upper surface of the aluminum layer. An interlayer insulating dielectric material is applied atop the aluminum layer. It is selectively patterned and etched to define a contact opening to the aluminum layer. A layer of titanium metal is applied atop the patterned and etched interlayer dielectric to a preselected thickness. The titanium metal contacts the upper aluminum oxide surface of the aluminum layer within the contact opening.
    Type: Grant
    Filed: October 3, 1991
    Date of Patent: April 6, 1993
    Assignee: Micron Technology, Inc.
    Inventors: Leslie A. Pearey, Timothy P. O'Brien, John E. Knudson, Thomas N. Melody, Russell C. Zahorik