Abstract: A variable power generation asset may be subject to ramp events, which are large variations in power generated by the variable power generation asset within a short period of time. A variable power generation forecast system may receive or generate benchmark power forecasts and generated power measurements. Ramp predictors are based on the benchmark power forecasts and the generated power measurements. The variable power generation forecast system utilizes a feedback error correction model that predicts forecast errors for the benchmark power forecasts at various look-ahead times. The variable power generation forecast system applies sets of decision trees to the ramp predictors and last known forecast errors of the benchmark power forecasts to obtain the predicted forecast errors. The variable power generation forecast systems uses the predicted forecast errors and the benchmark power forecasts to generate more accurate power forecasts at the various look-ahead times.

Abstract: An example method includes, at a weather forecast time, determining a lag between a target renewable energy site and a first nearby site for which respective power measurements are correlated, selecting a first forecast look-ahead time, determining if the first forecast look-ahead time is less than or equal to the lag, determining a series of lagged power measurements at a time of forecast which constitute a series of correlation-based forecasts for power generation at the target site based on the lag, generating a set of ramp predictors incorporating correlation-based forecasts from the first site and the first forecast look-ahead time, receiving power forecast errors, applying sets of decision trees to the predictors and the power forecast errors to obtain predicted forecast errors, and generating second power forecasts for the set of look-ahead times of the target site based on the first power forecasts and the predicted forecast errors.

Abstract: An integrated circuit, including a substrate, at least one metal wiring layer disposed above the substrate. The metal wiring layer including a wiring switch and a plurality of patterned conductors. The wiring switch including a back gate field effect transistor (BGFET).

Abstract: Ferroelectric semiconductor switching devices are provided, including field effect transistor (FET) devices having gate stack structures formed with a ferroelectric layer disposed between a gate contact and a thin conductive layer (“quantum conductive layer”). The gate contact and ferroelectric layer serve to modulate an effective work function of the thin conductive layer. The thin conductive layer with the modulated work function is coupled to a semiconductor channel layer to modulate current flow through the semiconductor and achieve a steep sub-threshold slope.

Abstract: An integrated circuit, including a substrate, at least one metal wiring layer disposed above the substrate. The metal wiring layer including a wiring switch and a plurality of patterned conductors. The wiring switch including a back gate field effect transistor (BGFET).

Abstract: Ferroelectric semiconductor switching devices are provided, including field effect transistor (FET) devices having gate stack structures formed with a ferroelectric layer disposed between a gate contact and a thin conductive layer (“quantum conductive layer”) . The gate contact and ferroelectric layer serve to modulate an effective work function of the thin conductive layer. The thin conductive layer with the modulated work function is coupled to a semiconductor channel layer to modulate current flow through the semiconductor and achieve a steep sub-threshold slope.

Abstract: A method of modulating light incident to a semiconductor body comprising the steps of: coupling the incident light to the surface plasmon polariton mode at an interface of the semiconductor body; and selectively altering the absorption of the incident light by the semiconductor body so as to decouple the incident light from the surface plasmon polariton mode. The absorption can be selectively altered by establishing a quantum confined optical absorption region within the semiconductor body, and effecting a Stark shift of the quantum confined optical absorption region.

Abstract: A field effect transistor comprising a semiconductor channel region; an undoped semiconductor material region adjacent the channel region; a second semiconductor material region separated from the channel region; and a region of semiconductor material adjacent the second region and having a narrower band gap than the band gap of the region adjacent the channel region; and ohmic contact means to the region having the narrower band gap.