Abstract: A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).

Abstract: A photovoltaic apparatus is provided including a first portion having a first surface facing a first direction; a second portion located in a different position in the first direction from the first portion; and a third portion located in a different position in the first direction from the first portion; a front sheet and a back sheet each extending at least partially through each of the first portion, the second portion, and the third portion. The photovoltaic apparatus further includes a first rigid folded portion connecting the first portion to the second portion, the first rigid folded portion including portions of the front sheet and the back sheet; and a second rigid folded portion connecting the first portion to the third portion, the second rigid folded portion including portions of the front sheet and the back sheet.

Abstract: An apparatus for detecting a rotation angle, comprising: an annular stator around an axis of revolution Z, comprising: at least a first pole, a second pole, and a third pole arranged at constant azimuthal intervals around the axis of revolution of the annular stator, each of the poles comprising one or more electrical windings, and each of the poles comprising a flange that is a portion of a first surface of revolution around the annular stator's axis of revolution, the flange having an area distribution substantially that, within a coordinate system, of a sin(?) function from a low ? bound of about 0 radians to a high ? bound of about ? radians. The apparatus may comprise a rotor that comprises sectors having the azimuthal extent of one flange and having different magnetic permeabilities. Methods for forming the apparatus and for obtaining measurements are also presented.

Abstract: A photo photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103) where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further deludes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic ceils (105).

Abstract: A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).

Abstract: A photovoltaic apparatus is provided including a back sheet and a photovoltaic device disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells extending in a first direction; and a plurality of serial interconnects having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet disposed over the photovoltaic device, the front sheet having a plurality of structures, wherein each structure has one or more edges aligned with one of the serial interconnects.

Abstract: An apparatus for detecting a rotation angle, comprising: an annular stator around an axis of revolution Z, comprising: at least a first pole, a second pole, and a third pole arranged at constant azimuthal intervals around the axis of revolution of the annular stator, each of the poles comprising one or more electrical windings, and each of the poles comprising a flange that is a portion of a first surface of revolution around the annular stator's axis of revolution, the flange having an area distribution substantially that, within a coordinate system, of a sin(?) function from a low ? bound of about 0 radians to a high ? bound of about ? radians. The apparatus may comprise a rotor that comprises sectors having the azimuthal extent of one flange and having different magnetic permeabilities. Methods for forming the apparatus and for obtaining measurements are also presented.

Abstract: A photovoltaic apparatus (200) is provided including a back sheet (210) and a photovoltaic device (100) disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells (101-104) extending in a first direction; and a plurality of serial interconnects (191) having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet (250) disposed over the photovoltaic device, the front sheet having a plurality of structures (220), wherein each structure has one or more edges (221) aligned with one of the serial interconnects.

Abstract: A mobile device for measuring reflectance properties of a surface includes a first imaging device comprising an image sensor and a lens characterized by an optical axis; a first illumination source having an optical axis disposed at an angle of 45° with respect to the first imaging device lens' optical axis; a second imaging device comprising an image sensor and a lens characterized by an optical axis; and a second illumination source having an optical axis intersecting the first imaging device lens' optical axis where the first illumination source intersects the first imaging device lens' optical axis, the optical axes of the first imaging device and the second illumination source defining a second measurement plane. The mobile device further comprises a computer processor and a non-volatile memory comprising computer-readable instructions to acquire data from the first and second imaging devices and derive reflectance information of the surface of interest.

Abstract: A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

Abstract: A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

Abstract: A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).

Abstract: A photovoltaic apparatus is provided including a first portion having a first surface facing a first direction; a second portion located in a different position in the first direction from the first portion; and a third portion located in a different position in the first direction from the first portion; a front sheet and a back sheet each extending at least partially through each of the first portion, the second portion, and the third portion. The photovoltaic apparatus further includes a first rigid folded portion connecting the first portion to the second portion, the first rigid folded portion including portions of the front sheet and the back sheet; and a second rigid folded portion connecting the first portion to the third portion, the second rigid folded portion including portions of the front sheet and the back sheet.

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: A photovoltaic apparatus (200) is provided including a back sheet (210) and a photovoltaic device (100) disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells (101-104) extending in a first direction; and a plurality of serial interconnects (191) having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet (250) disposed over the photovoltaic device, the front sheet having a plurality of structures (220), wherein each structure has one or more edges (221) aligned with one of the serial interconnects.

Abstract: A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165?, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127?) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155?) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).

Abstract: A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165?, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127?) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155?) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistivity than th at of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100).