Abstract: A motor vehicle has a front, a rear, a driving direction directed from the rear to the front, a reverse driving direction which is directed in the opposite direction to the driving direction, a cargo compartment access point and a cargo compartment which is accessible via the cargo compartment access point. A user of the motor vehicle can be detected located outside the motor vehicle and in the reverse driving direction from the motor vehicle. In the event that the user moves away from the motor vehicle in the reverse driving direction, the motor vehicle can follow the user in that the motor vehicle drives autonomously in the reverse driving direction; It can be determined whether the user intends to reach into the cargo compartment. In the event that the answer is yes, the motor vehicle can drive autonomously to a standstill of the motor vehicle, in such a way that a loading distance between the cargo compartment access point and the user is finely adjusted.

Abstract: A substrate support for use in a substrate processing chamber includes a ceramic electrostatic chuck having a body having an outer diameter, a first side configured to support a substrate and a second side opposite the first side, and a thickness between the first side and the second side, wherein the body comprises at least one chucking electrode having a radially outer surface and a far edge electrode disposed adjacent to the chucking electrode and extending radially outwardly of the at least one chucking electrode.

Abstract: A method for remotely controlling the movement of a vehicle by means of a hand-held device is described. The method includes the following steps: activating a button by pressing and holding the button by a user; setting a tilt angle of the device by the user starting from an initial tilt angle when activating the button; receiving a signal representing the current tilt angle of the device; converting the received signal into a virtual pedal position, which corresponds to the position of a physical pedal corresponding to the virtual pedal; controlling the movement of the vehicle according to the virtual pedal position; and stopping the vehicle if pressing and holding the button is ended.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A nozzle unit for a reaction molding machine, comprising an inlet channel prepared for connection to a mixing head outlet and comprising a first dispensing nozzle, which is prepared for applying a reactive mixture and which is connected to the inlet channel in a first operating state, a second dispensing nozzle being present, which is connected to the inlet channel in a second operating state and which is likewise prepared for applying a reactive mixture. Further disclosed is a mixing head device for a reaction molding machine having the nozzle unit, to a reaction molding machine having the mixing head device, and to a method for producing a plastic part.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Enhancing situational awareness of an advanced driver assistance system in a host vehicle can be provided by acquiring, with an image sensor, an image data stream comprising a plurality of image frames. Analyzing A vision processor can analyze the image data stream to detect objects, shadows and/or lighting in the image frames. Recognizing A situation recognition engine can recognize at least one most probable traffic situation out of a set of predetermined traffic situations taking into account the detected objects, shadows and/or lighting. A processor can then control the host vehicle taking into account the at least one most probable traffic situation.

Abstract: A process for purifying a recombinant protein comprising the steps of: i) providing a solution comprising the recombinant protein; ii) adding an alkyl glycoside to the solution; and iii) purifying the recombinant protein. The addition of the alkyl glycoside provides improved clearance of process-related impurities. The purified recombinant protein of the invention has low levels of host cell DNA, host cell protein and viral contamination.

Abstract: A device and a method for producing reaction plastics, including a first metering device with a first metering unit and a second metering unit, each of which is suitable for receiving and dispensing a first mixing component in a metered manner, a second metering device which is suitable for receiving and dispensing a second mixing component in a metered manner, and a mixing device which is suitable for receiving and mixing the first mixing component dispensed by the first metering unit and/or the second metering unit of the first metering device and the second mixing component dispensed by the second metering device.

Abstract: A device and a method for producing reaction plastics, including a first metering device with a first metering unit and a second metering unit, each of which is suitable for receiving and dispensing a first mixing component in a metered manner, a second metering device which is suitable for receiving and dispensing a second mixing component in a metered manner, and a mixing device which is suitable for receiving and mixing the first mixing component dispensed by the first metering unit and/or the second metering unit of the first metering device and the second mixing component dispensed by the second metering device.

Abstract: A method and apparatus for positioning and heating a substrate in a chamber are provided. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A process for purifying a recombinant protein comprising the steps of: i) providing a solution comprising the recombinant protein; ii) adding an alkyl glycoside to the solution; and iii) purifying the recombinant protein. The addition of the alkyl glycoside provides improved clearance of process-related impurities. The purified recombinant protein of the invention has low levels of host cell DNA, host cell protein and viral contamination.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

Abstract: The present invention relates to a method of filtrating a solution comprising von Willebrand Factor (VWF), the method comprising (a) providing a solution comprising VWF and a basic amino acid; and (b) subjecting the solution of step (a) to a virus filtration through a filter having a pore size of less than or equal to 35 nm.

Abstract: Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

Abstract: A nozzle unit for a reaction molding machine, comprising an inlet channel prepared for connection to a mixing head outlet and comprising a first dispensing nozzle, which is prepared for applying a reactive mixture and which is connected to the inlet channel in a first operating state, a second dispensing nozzle being present, which is connected to the inlet channel in a second operating state and which is likewise prepared for applying a reactive mixture. Further disclosed is a mixing head device for a reaction molding machine having the nozzle unit, to a reaction molding machine having the mixing head device, and to a method for producing a plastic part.

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.