Patents by Inventor Thomas Oetzel

Thomas Oetzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Creation of dielectrically insulating soi-technlogical trenches comprising rounded edges for allowing higher voltages
    Patent number: 7989308
    Abstract: The aim of the invention is to integrate low-voltage logic elements and high-voltage power elements in one and the same silicon circuit. Said aim is achieved by dielectrically chip regions having different potentials from each other with the aid of isolation trenches (10). In order to prevent voltage rises at sharp edges on the bottom of the isolation trenches, said edges are rounded in a simple process, part of the insulating layer (2) being isotropically etched.
    Type: Grant
    Filed: April 7, 2005
    Date of Patent: August 2, 2011
    Assignee: X-FAB Semiconductor Foundries AG
    Inventors: Ralf Lerner, Uwe Eckoldt, Thomas Oetzel
  • Creation of Dielectrically Insulating Soi-Technlogical Trenches Comprising Rounded Edges for Allowing Higher Voltages
    Publication number: 20080265364
    Abstract: The aim of the invention is to integrate low-voltage logic elements and high-voltage power elements in one and the same silicon circuit. Said aim is achieved by dielectrically chip regions having different potentials from each other with the aid of isolation trenches (10). In order to prevent voltage rises at sharp edges on the bottom of the isolation trenches, said edges are rounded in a simple process, part of the insulating layer (2) being isotropically etched.
    Type: Application
    Filed: April 7, 2005
    Publication date: October 30, 2008
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Ralf Lerner, Uwe Eckoldt, Thomas Oetzel