Patents by Inventor Thomas Ortleb

Thomas Ortleb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Automatic deposition profile targeting
    Patent number: 8323471
    Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: December 4, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Thomas Ortleb, Markus Nopper, Dirk Wollstein
  • Advanced automatic deposition profile targeting and control by applying advanced polish endpoint system feedback
    Patent number: 7899570
    Abstract: The present disclosure relates to automatic deposition profile targeting with a combined deposition/polishing apparatus which obtains matching deposition and subsequent polishing profiles by use of feedback data from an advanced polish endpoint system in an advanced process control system.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: March 1, 2011
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Thomas Ortleb, Markus Nopper, Thomas Roessler
  • Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices
    Patent number: 7781329
    Abstract: By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: August 24, 2010
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Axel Preusse, Markus Nopper, Thomas Ortleb, Juergen Boemmels
  • REDUCING LEAKAGE IN DIELECTRIC MATERIALS INCLUDING METAL REGIONS INCLUDING A METAL CAP LAYER IN SEMICONDUCTOR DEVICES
    Publication number: 20090325375
    Abstract: By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.
    Type: Application
    Filed: April 17, 2009
    Publication date: December 31, 2009
    Inventors: Axel Preusse, Markus Nopper, Thomas Ortleb, Juergen Boemmels
  • ADVANCED AUTOMATIC DEPOSITION PROFILE TARGETING AND CONTROL BY APPLYING ADVANCED POLISH ENDPOINT SYSTEM FEEDBACK
    Publication number: 20090036029
    Abstract: The present disclosure relates to automatic deposition profile targeting with a combined deposition/polishing apparatus which obtains matching deposition and subsequent polishing profiles by use of feedback data from an advanced polish endpoint system in an advanced process control system.
    Type: Application
    Filed: February 27, 2008
    Publication date: February 5, 2009
    Inventors: Thomas Ortleb, Markus Nopper, Thomas Roessler
  • AUTOMATIC DEPOSITION PROFILE TARGETING
    Publication number: 20090000950
    Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.
    Type: Application
    Filed: February 21, 2008
    Publication date: January 1, 2009
    Inventors: Thomas Ortleb, Markus Nopper, Dirk Wollstein