Abstract: Superconformally filling a recessed feature includes: contacting the recessed feature with superconformal filling composition that includes: Au(SO3)23? anions; SO32? anions; and Bi3+ cations; convectively transporting Au(SO3)23? and Bi3+ to the bottom member of the recessed feature; subjecting the recessed feature to an electrical current to superconformally deposit gold from the Au(SO3)23? on the bottom member relative to the sidewall and the field, the electrical current providing a cathodic voltage; and increasing the electrical current subjected to the field and the recessed feature to maintain the cathodic voltage between ?0.85 V and ?1.00 V relative to the SSE during superconformally depositing gold on the substrate to superconformally fill the recessed feature of the article with gold as a superconformal filling of gold, the superconformal filling being void-free and seam-free.

Abstract: Forming a transition zone terminated superconformal filling in a recess includes: providing an electrodeposition composition including: a metal electrolyte including a plurality of metal ions, solvent, and suppressor; providing the article including: a field surface and the recess that includes a distal position and a proximate position; exposing the recess to the electrodeposition composition; potentiodynamically controlling an electric potential of the recess with a potential wave form; bifurcating the recess into an active metal deposition region and a passive region; forming a transition zone; decreasing the electric potential of the recess by the potential wave form; progressively moving the transition zone closer to the field surface and away from the distal position; and reducing the metal ions and depositing the metal in the active metal deposition region and not in the passive region to form the transition zone terminated superconformal filling in the recess of the substrate.

Abstract: Forming a transition zone terminated superconformal filling in a recess includes: providing an electrodeposition composition including: a metal electrolyte including a plurality of metal ions, solvent, and suppressor; providing the article including: a field surface and the recess that includes a distal position and a proximate position; exposing the recess to the electrodeposition composition; potentiodynamically controlling an electric potential of the recess with a potential wave form; bifurcating the recess into an active metal deposition region and a passive region; forming a transition zone; decreasing the electric potential of the recess by the potential wave form; progressively moving the transition zone closer to the field surface and away from the distal position; and reducing the metal ions and depositing the metal in the active metal deposition region and not in the passive region to form the transition zone terminated superconformal filling in the recess of the substrate.

Abstract: Superconformally filling a recessed feature includes: contacting the recessed feature with superconformal filling composition that includes: Au(SO3)23? anions; SO32? anions; and Bi3+ cations; convectively transporting Au(SO3)23? and Bi3+ to the bottom member of the recessed feature; subjecting the recessed feature to an electrical current to superconformally deposit gold from the Au(SO3)23? on the bottom member relative to the sidewall and the field, the electrical current providing a cathodic voltage; and increasing the electrical current subjected to the field and the recessed feature to maintain the cathodic voltage between ?0.85 V and ?1.00 V relative to the SSE during superconformally depositing gold on the substrate to superconformally fill the recessed feature of the article with gold as a superconformal filling of gold, the superconformal filling being void-free and seam-free.

Abstract: Forming a transition zone terminated superconformal filling in a recess includes: providing an electrodeposition composition including: a metal electrolyte including a plurality of metal ions, solvent, and suppressor; providing the article including: a field surface and the recess that includes a distal position and a proximate position; exposing the recess to the electrodeposition composition; potentiodynamically controlling an electric potential of the recess with a potential wave form; bifurcating the recess into an active metal deposition region and a passive region; forming a transition zone; decreasing the electric potential of the recess by the potential wave form; progressively moving the transition zone closer to the field surface and away from the distal position; and reducing the metal ions and depositing the metal in the active metal deposition region and not in the passive region to form the transition zone terminated superconformal filling in the recess of the substrate.

Abstract: A process for depositing a plurality of layers of iridium on a substrate includes: contacting the substrate with an electrolyte composition including: iridium cations protons; biasing the substrate at a first potential; forming iridium on the substrate at the first potential of the substrate; disposing hydrogen on the substrate; self-terminating the forming of iridium on the substrate in response to increasing a coverage of hydrogen on the substrate; oxidizing hydrogen on the substrate by changing a potential of the substrate from the first potential to a second potential; and changing the potential of the substrate from the second potential to a third potential for forming additional iridium on the substrate to deposit a plurality of layers of iridium on the substrate, such that forming the additional iridium on the substrate occurs at the third potential in response to oxidizing the hydrogen on the substrate at the second potential.

Abstract: A self-terminating rapid process for controlled growth of platinum or platinum alloy monolayer films from a K2PtCl4—NaCl—NaBr electrolyte. Using the present process, platinum deposition may be quenched at potentials just negative of proton reduction by an alteration of the double layer structure induced by a saturated surface coverage of underpotential deposited hydrogen. The surface may be reactivated for platinum deposition by stepping the potential to more positive values where underpotential deposited hydrogen is oxidized and fresh sites for absorption of platinum chloride become available. Periodic pulsing of the potential enables sequential deposition of two dimensional platinum layers to fabricate films of desired thickness relevant to a range of advanced technologies, from catalysis to magnetics and electronics.

Abstract: A photoactive article includes a substrate including a semiconductor to absorb light and to produce a plurality of charge carriers; a dielectric layer disposed on the substrate; a conductive member disposed on the dielectric layer and opposing the substrate such that the dielectric layer is exposed by the conductive member, the conductive member to receive a portion of the plurality of charge carriers from the substrate; and an electrolyte disposed on the dielectric layer and the conductive member. Making a photoactive article includes forming a dielectric layer on a substrate by rapid thermal oxidation, the dielectric layer comprising an oxide of a semiconductor; and forming a conductive member disposed on the dielectric layer.

Abstract: A process for depositing a plurality of layers of iridium on a substrate includes: contacting the substrate with an electrolyte composition including: iridium cations protons; biasing the substrate at a first potential; forming iridium on the substrate at the first potential of the substrate; disposing hydrogen on the substrate; self-terminating the forming of iridium on the substrate in response to increasing a coverage of hydrogen on the substrate; oxidizing hydrogen on the substrate by changing a potential of the substrate from the first potential to a second potential; and changing the potential of the substrate from the second potential to a third potential for forming additional iridium on the substrate to deposit a plurality of layers of iridium on the substrate, such that forming the additional iridium on the substrate occurs at the third potential in response to oxidizing the hydrogen on the substrate at the second potential.

Abstract: A photoactive article includes a substrate including a semiconductor to absorb light and to produce a plurality of charge carriers; a dielectric layer disposed on the substrate; a conductive member disposed on the dielectric layer and opposing the substrate such that the dielectric layer is exposed by the conductive member, the conductive member to receive a portion of the plurality of charge carriers from the substrate; and an electrolyte disposed on the dielectric layer and the conductive member. Making a photoactive article includes forming a dielectric layer on a substrate by rapid thermal oxidation, the dielectric layer comprising an oxide of a semiconductor; and forming a conductive member disposed on the dielectric layer.

Abstract: A self-terminating rapid process for controlled growth of platinum or platinum alloy monolayer films from a K2PtCl4—NaCl—NaBr electrolyte. Using the present process, platinum deposition may be quenched at potentials just negative of proton reduction by an alteration of the double layer structure induced by a saturated surface coverage of underpotential deposited hydrogen. The surface may be reactivated for platinum deposition by stepping the potential to more positive values where underpotential deposited hydrogen is oxidized and fresh sites for absorption of platinum chloride become available. Periodic pulsing of the potential enables sequential deposition of two dimensional platinum layers to fabricate films of desired thickness relevant to a range of advanced technologies, from catalysis to magnetics and electronics.

Abstract: A process for producing three dimensionally structured thin film photovoltaic devices with self-aligned back contacts. The photovoltaic device is constructed using electrodeposition on micrometer-scale interdigitated electrodes on an insulating substrate. During fabrication, these interdigitated electrodes serve as the active electrodes for deposition of materials including semiconductors. After fabrication, these interdigitated electrodes serve as back contacts for carrier collection when the device is in use. The process can be used to fabricate homojunction, heterojunction and multijunction photovoltaic devices.

Abstract: A process for electrodepositing at least one ferromagnetic material into a three dimensional pattern within a substrate is provided. The process comprises providing a substrate material, dielectric or conductor, having a three dimensional recessed pattern in at least one outer surface thereof, dielectric substrate materials also having an electrical conductive seed layer at least within the three dimensional pattern. An electrolytic bath is prepared comprising at least one ferromagnetic material and at least one accelerating, inhibiting, or depolarizing additive. The at least one ferromagnetic material comprises at least one metal cation selected from the group consisting of Ni2+, Co2+, Fe2+, Fe3+, and combinations thereof. The substrate is placed into the electrolytic bath and the electrolytic bath contacts the conducting three dimensional pattern in the substrate or the conducting seed layer within the pattern on a dielectric substrate. A counter electrode is placed into the electrolytic bath.

Abstract: The process of this invention involves first adsorbing a catalyst on the surface of a specimen by immersion in a catalyst-containing solution, followed by electrolytic deposition in a second solution that need not contain catalyst. This two-step superconformal process produces a seam-free and void-free metal microelectronic conductor.

Abstract: The process of this invention involves first adsorbing a catalyst on the surface of a specimen by immersion in a catalyst-containing solution, followed by electrolytic deposition in a second solution that need not contain catalyst. This two-step superconformal process produces a seam-free and void-free metal microelectronic conductor.