Patents by Inventor Thomas Parrill

Thomas Parrill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implanter for photovoltaic cell fabrication
    Patent number: 8242468
    Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: August 14, 2012
    Assignee: Twin Creeks Technologies, Inc.
    Inventors: Thomas Parrill, Aditya Agarwal
  • Hydrogen ion implanter using a broad beam source
    Patent number: 7897945
    Abstract: Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.
    Type: Grant
    Filed: September 25, 2008
    Date of Patent: March 1, 2011
    Assignee: Twin Creeks Technologies, Inc.
    Inventors: Thomas Parrill, Victor Benveniste
  • ION IMPLANTER FOR PHOTOVOLTAIC CELL FABRICATION
    Publication number: 20100264303
    Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
    Type: Application
    Filed: June 28, 2010
    Publication date: October 21, 2010
    Applicant: TWIN CREEKS TECHNOLOGIES, INC.
    Inventors: Thomas Parrill, Aditya Agarwal
  • Ion implanter for photovoltaic cell fabrication
    Patent number: 7750322
    Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: July 6, 2010
    Assignee: Twin Creeks Technologies, Inc.
    Inventors: Thomas Parrill, Aditya Agarwal
  • Ion implanter for noncircular wafers
    Patent number: 7687786
    Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: March 30, 2010
    Assignee: Twin Creeks Technologies, Inc.
    Inventors: Thomas Parrill, Aditya Agarwal
  • HYDROGEN ION IMPLANTER USING A BROAD BEAM SOURCE
    Publication number: 20100072401
    Abstract: Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.
    Type: Application
    Filed: September 25, 2008
    Publication date: March 25, 2010
    Applicant: Twin Creeks Technologies, Inc.
    Inventors: Thomas Parrill, Victor Benveniste
  • ION IMPLANTER FOR PHOTOVOLTAIC CELL FABRICATION
    Publication number: 20090283705
    Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
    Type: Application
    Filed: April 3, 2009
    Publication date: November 19, 2009
    Inventors: THOMAS PARRILL, ADITYA AGARWAL
  • Ion Implanter For Photovoltaic Cell Fabrication
    Publication number: 20090283669
    Abstract: Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.
    Type: Application
    Filed: May 16, 2008
    Publication date: November 19, 2009
    Inventors: Thomas Parrill, Aditya Agarwal
  • Ion beam incident angle detector for ion implant systems
    Patent number: 6828572
    Abstract: The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
    Type: Grant
    Filed: April 1, 2003
    Date of Patent: December 7, 2004
    Assignee: Axcelis Technologies, Inc.
    Inventors: Ronald N. Reece, Michael A. Graf, Thomas Parrill, Brian S. Freer
  • ION BEAM INCIDENT ANGLE DETECTOR FOR ION IMPLANT SYSTEMS
    Publication number: 20040195528
    Abstract: The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
    Type: Application
    Filed: April 1, 2003
    Publication date: October 7, 2004
    Inventors: Ronald N. Reece, Michael A. Graf, Thomas Parrill, Brian S. Freer