Patents by Inventor Thomas PARSON

Thomas PARSON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164738
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: November 2, 2021
    Assignee: Entegris, Inc.
    Inventors: Daniela White, Thomas Parson, Michael White, Emanuel I. Cooper, Atanu Das
  • Patent number: 10988718
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: April 27, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas Parson, Shrane-Ning Jenq, Steven Medd, Daniela White, Michael White, Donald Frye
  • Patent number: 10340150
    Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: July 2, 2019
    Assignee: Entegris, Inc.
    Inventors: Steven Bilodeau, Jeffrey A. Barnes, Emanuel Cooper, Hsing-Chen Wu, Sheng-Hung Tu, Thomas Parson, Min-chieh Yang
  • Publication number: 20190177671
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
    Type: Application
    Filed: March 9, 2017
    Publication date: June 13, 2019
    Inventors: Thomas PARSON, Shrane-Ning JENQ, Steven MEDD, Daniela WHITE, Michael WHITE, Donald FRYE
  • Publication number: 20180204736
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
    Type: Application
    Filed: January 18, 2018
    Publication date: July 19, 2018
    Inventors: Daniela White, Thomas Parson, Michael White, Emmanuel I. Cooper, Atanu Das
  • Publication number: 20160314990
    Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
    Type: Application
    Filed: December 16, 2014
    Publication date: October 27, 2016
    Applicants: ENTEGRIS, INC., ATMI TAIWAN CO., LTD.
    Inventors: Steven BILODEAU, Jeffrey A. BARNES, Emanuel COOPER, Hsing-Chen WU, Sheng-Hung TU, Thomas PARSON, Min-chieh YANG