Abstract: A semiconductor device has first, second, and third connecting leads (1, 2, 3), whose respective base points (1f, 2f, 3f) have centroids (1m, 2m, 3m). The connecting leads are arranged wherein an angle (?) between a first line drawn between the centroids (1m, 3m) of the base points (1f, 3f) of first lead (1) and third lead (3) and a second line drawn between the centroids (2m, 3m) of the base points (2f, 3f) of second lead (2) and third lead (3) is 20° maximum. In addition, a semiconductor module may incorporate two or more semiconductor devices which are connected electrically in parallel.

Abstract: A power semiconductor arrangement has a heat-removing base with at least one planar exterior. The base consists of a metal material or is provided with a metal coat. The exterior is at least partially provided with an electrically insulating oxide layer on top of the metal material. The power semiconductor arrangement also has a power semiconductor component that is disposed on the one exterior of the base in such a manner that it is electrically insulated from the base by the oxide layer. An electrically insulated film is at least partially laminated onto the one exterior across the power semiconductor component. The film, in the area of the power semiconductor component, is provided with recesses for contacting the power semiconductor component. An upper metallization layer is applied to the power semiconductor component on top of the film and its recesses across a large area thereof or in a structured manner.

Abstract: A semiconductor power module has a support (1), whereon are formed conductor strips (5, 6, 7, 8) by applying a structure on an electrically conductive layer (3) applied on one side (2) of the support. A semiconductor power module can be manufactured easily and economically enabling several mounting technologies by using a homogeneous base support. Therefore, the conductor strips (5, 6, 7, 8), as integral elements of the conductor circuit have loose ends (6a, 7a, 8a) detached from the side (2) of the support, the ends of the conductor strips extending outside the support (1) and forming external connections.

Abstract: A semiconductor device has connecting leads, whose base points (1f, 2f, 3f) have centroids (1m, 2m, 3m), wherein the connecting line between the centroids (1m, 3m) of the base points (1f, 3f) of the first (1) and third (3) connecting lead, and the connecting line between the centroids (2m, 3m) of the base points (2f, 3f) of the second (2) and third (3) connecting lead enclose an angle (?) of 20° maximum. In addition, a semiconductor module may incorporate two or more semiconductor devices which are connected electrically in parallel.