Abstract: This disclosure describes systems, methods, and devices related to testing an integrated circuit for defects. A method may include applying a nominal voltage to the integrated circuit for a first time period; applying a dynamic voltage greater than the nominal voltage to the integrated circuit for a second time period after the first time period; applying a static voltage greater than the dynamic voltage to the integrated circuit for a third time period after the second time period, wherein the static voltage is a target static voltage less than a target voltage; and applying the dynamic voltage to the integrated circuit during a fourth time period after the third time period.

Abstract: The invention relates to an electronic switching circuit in which a plurality of test circuit blocks is provided, whereby every test circuit block comprises a first sub-circuit block and at least one second sub-circuit block. A field effect transistor in the first sub-circuit block has a gate insulation layer that is thicker than the gate insulation layer of a field effect transistor in the second sub-circuit block.

Abstract: The invention relates to an electronic switching circuit in which a plurality of test circuit blocks is provided, whereby every test circuit block comprises a first sub-circuit block and at least one second sub-circuit block. A field effect transistor in the first sub-circuit block has a gate insulation layer that is thicker than the gate insulation layer of a field effect transistor in the second sub-circuit block.

Abstract: A method of fabricating a barrier layer includes oxidizing a silicon-containing substrate to form a substrate oxide layer on the surface of the substrate, producing an oxygen-impervious layer at an interface between the substrate oxide layer and the substrate, and etching the substrate oxide layer until the underlying oxygen-impervious layer is uncovered.

Abstract: The capacitive electrode structure has a semiconductor substrate, a metal oxide layer on the semiconductor substrate, an oxidation inhibiting layer on the metal oxide layer, and an electrode formed on the oxidation inhibiting layer. The oxidation inhibiting layer is substantially impervious to oxygen and prevents oxygen atoms from diffusing into the metal oxide layer.

Abstract: Method for fabricating a barrier layer having the following steps, namely

Abstract: The present invention provides a method for forming a dielectric 1; 7, 8 on a semiconductor substrate 2 having the following steps: implantation of ions into a surface layer of the semiconductor substrate 2, the ions forming a first dielectric layer 7; and performance of a thermal oxidation process for forming a second dielectric layer 8 on the first dielectric layer 7. Consequently, e.g. by the implantation of nitrogen ions into a surface layer of a silicon substrate, the imperfection density of the dielectric formed can be reduced approximately by a factor of 10.