Patents by Inventor Thomas Popp

Thomas Popp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10640998
    Abstract: A mobile container building for military, humanitarian and/or expeditionary applications has a transportable container with a floor panel, a ceiling panel and side walls, which together define an interior space having a longitudinal extent. An interior arrangement, which provides a functional working area for deployed personnel, is arranged in the interior space. The floor panel has a ribbed structure including a plurality of ribs evenly spaced apart from one another on a side oriented towards the interior space. A load-bearing steel sheet is secured onto the ribbed structure. The steel sheet covers the ribbed structure and carries the interior arrangement.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: May 5, 2020
    Assignee: KAERCHER FUTURETECH GMBH
    Inventors: S Harald Vige Teie Andersen, Thomas Popp
  • Patent number: 10571681
    Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies AG
    Inventors: Roland Meier, Klemens Pruegl, Bernhard Winkler, Thomas Popp, Raimund Foerg
  • Patent number: 10461203
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: October 29, 2019
    Assignee: Infineon Technologie AG
    Inventors: Stefan Clara, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Publication number: 20190136552
    Abstract: A mobile container building for military, humanitarian and/or expeditionary applications has a transportable container with a floor panel, a ceiling panel and side walls, which together define an interior space having a longitudinal extent. An interior arrangement, which provides a functional working area for deployed personnel, is arranged in the interior space. The floor panel has a ribbed structure including a plurality of ribs evenly spaced apart from one another on a side oriented towards the interior space. A load-bearing steel sheet is secured onto the ribbed structure. The steel sheet covers the ribbed structure and carries the interior arrangement.
    Type: Application
    Filed: October 31, 2018
    Publication date: May 9, 2019
    Inventors: S Harald Vige Teie Andersen, Thomas Popp
  • Patent number: 10170210
    Abstract: A device system for military and/or humanitarian operations, in particular a mobile decontamination system, comprises a plurality of power-operated units, accessory parts and operating supplies, which together determine a functional scope of the device system. The power-operated units, accessory parts and operating supplies are mounted on a base plate by means of a retaining structure, said base plate having a defined placement surface and anchoring elements. The anchoring elements enable detachable anchoring of the base plate together with the retaining structure to a transport means, in particular to a transport vehicle. The retaining structure is formed from a plurality of self-supporting, structurally identical, cuboid-shaped frames, which are arranged next to each other and/or on top of each other and are fastened to the base plate. The frames each have eight corner pieces and twelve edge profile elements, which together enclose a defined storage volume.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: January 1, 2019
    Assignee: KAERCHER FUTURETECH GMBH
    Inventors: Thomas Popp, Ulli Reinhardt, Daniel Ruprecht
  • Publication number: 20180212085
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 26, 2018
    Inventors: Stefan CLARA, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Patent number: 9941432
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 10, 2018
    Assignee: Infineon Technologies AG
    Inventors: Stefan Clara, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Publication number: 20170371148
    Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
    Type: Application
    Filed: August 22, 2017
    Publication date: December 28, 2017
    Inventors: Roland Meier, Klemens Pruegl, Bernhard Winkler, Thomas Popp, Raimund Foerg
  • Patent number: 9798132
    Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: October 24, 2017
    Assignee: Infineon Technologies AG
    Inventors: Roland Meier, Klemens Pruegl, Bernhard Winkler, Thomas Popp, Raimund Foerg
  • Publication number: 20160351739
    Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 1, 2016
    Inventors: Stefan CLARA, Thomas Grille, Ursula Hedenig, Peter Irsigler, Bernhard Jakoby, Ventsislav M. Lavchiev, Thomas Ostermann, Thomas Popp
  • Patent number: 9508790
    Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: November 29, 2016
    Assignee: Infineon Technologies AG
    Inventors: Thomas Popp, Stefan Pompl, Rudolf Berger
  • Publication number: 20160276048
    Abstract: A device system for military and/or humanitarian operations, in particular a mobile decontamination system, comprises a plurality of power-operated units, accessory parts and operating supplies, which together determine a functional scope of the device system. The power-operated units, accessory parts and operating supplies are mounted on a base plate by means of a retaining structure, said base plate having a defined placement surface and anchoring elements. The anchoring elements enable detachable anchoring of the base plate together with the retaining structure to a transport means, in particular to a transport vehicle. The retaining structure is formed from a plurality of self-supporting, structurally identical, cuboid-shaped frames, which are arranged next to each other and/or on top of each other and are fastened to the base plate. The frames each have eight corner pieces and twelve edge profile elements, which together enclose a defined storage volume.
    Type: Application
    Filed: June 2, 2016
    Publication date: September 22, 2016
    Inventors: Thomas POPP, Ulli REINHARDT, Daniel RUPRECHT
  • Publication number: 20150362722
    Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
    Type: Application
    Filed: May 27, 2015
    Publication date: December 17, 2015
    Inventors: Roland Meier, Klemens Pruegl, Bernhard Winkler, Thomas Popp, Raimund Foerg
  • Publication number: 20150263083
    Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.
    Type: Application
    Filed: May 28, 2015
    Publication date: September 17, 2015
    Inventors: Thomas Popp, Stefan Pompl, Rudolf Berger
  • Patent number: 9111781
    Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: August 18, 2015
    Assignee: Infineon Technologies AG
    Inventors: Thomas Popp, Stefan Pompl, Rudolf Berger
  • Patent number: 9048244
    Abstract: A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: June 2, 2015
    Assignee: Infineon Technologies AG
    Inventor: Thomas Popp
  • Publication number: 20150037964
    Abstract: A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.
    Type: Application
    Filed: October 15, 2014
    Publication date: February 5, 2015
    Inventor: Thomas Popp
  • Patent number: 8901715
    Abstract: A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: December 2, 2014
    Assignee: Infineon Technologies AG
    Inventor: Thomas Popp
  • Publication number: 20130221483
    Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.
    Type: Application
    Filed: February 24, 2012
    Publication date: August 29, 2013
    Applicant: Infineon Technologies AG
    Inventors: Thomas Popp, Stefan Pompl, Rudolf Berger
  • Publication number: 20060225265
    Abstract: The present invention discloses a mandrel for fabricating a monolithic composite nacelle panel for use on an airplane. Also disclosed is the method of constructing the mandrel, the method of assembling the mandrel, and the method of disassembling the mandrel.
    Type: Application
    Filed: March 29, 2005
    Publication date: October 12, 2006
    Applicant: THE BOEING COMPANY
    Inventors: John Burnett, David Hackler, Timothy Wilson, John Welch, Thomas Popp, Christopher Sawyer, Leo Hoadley, Leroy Fulbright, Mitchel Granger, Barry Craig, Phillip Kenney