Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Abstract: An actuating apparatus for controlling a locking system of a motor vehicle, including a circuit arrangement having a first input for receiving an operating signal and an output for providing a control signal to the locking system, the control signal being generated in dependence on the operating signal. The actuating apparatus further comprises a manually operated emergency unlocking device, and the circuit arrangement comprises a second input for receiving an event signal, wherein upon receipt of the event signal the manually operated emergency unlocking device is enabled for manual operation.

Abstract: A mobile container building for military, humanitarian and/or expeditionary applications has a transportable container with a floor panel, a ceiling panel and side walls, which together define an interior space having a longitudinal extent. An interior arrangement, which provides a functional working area for deployed personnel, is arranged in the interior space. The floor panel has a ribbed structure including a plurality of ribs evenly spaced apart from one another on a side oriented towards the interior space. A load-bearing steel sheet is secured onto the ribbed structure. The steel sheet covers the ribbed structure and carries the interior arrangement.

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A mobile container building for military, humanitarian and/or expeditionary applications has a transportable container with a floor panel, a ceiling panel and side walls, which together define an interior space having a longitudinal extent. An interior arrangement, which provides a functional working area for deployed personnel, is arranged in the interior space. The floor panel has a ribbed structure including a plurality of ribs evenly spaced apart from one another on a side oriented towards the interior space. A load-bearing steel sheet is secured onto the ribbed structure. The steel sheet covers the ribbed structure and carries the interior arrangement.

Abstract: A device system for military and/or humanitarian operations, in particular a mobile decontamination system, comprises a plurality of power-operated units, accessory parts and operating supplies, which together determine a functional scope of the device system. The power-operated units, accessory parts and operating supplies are mounted on a base plate by means of a retaining structure, said base plate having a defined placement surface and anchoring elements. The anchoring elements enable detachable anchoring of the base plate together with the retaining structure to a transport means, in particular to a transport vehicle. The retaining structure is formed from a plurality of self-supporting, structurally identical, cuboid-shaped frames, which are arranged next to each other and/or on top of each other and are fastened to the base plate. The frames each have eight corner pieces and twelve edge profile elements, which together enclose a defined storage volume.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: A device system for military and/or humanitarian operations, in particular a mobile decontamination system, comprises a plurality of power-operated units, accessory parts and operating supplies, which together determine a functional scope of the device system. The power-operated units, accessory parts and operating supplies are mounted on a base plate by means of a retaining structure, said base plate having a defined placement surface and anchoring elements. The anchoring elements enable detachable anchoring of the base plate together with the retaining structure to a transport means, in particular to a transport vehicle. The retaining structure is formed from a plurality of self-supporting, structurally identical, cuboid-shaped frames, which are arranged next to each other and/or on top of each other and are fastened to the base plate. The frames each have eight corner pieces and twelve edge profile elements, which together enclose a defined storage volume.

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Abstract: A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.

Abstract: A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.