Patents by Inventor Thomas Prunty

Thomas Prunty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical GaN-based metal insulator semiconductor FET
    Patent number: 8558242
    Abstract: A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: October 15, 2013
    Assignee: Avogy, Inc.
    Inventors: Richard J. Brown, Hui Nie, Andrew Edwards, Isik Kizilyalli, David Bour, Thomas Prunty, Linda Romano, Madhan Raj
  • Vertical GaN-Based Metal Insulator Semiconductor FET
    Publication number: 20130146885
    Abstract: A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.
    Type: Application
    Filed: December 9, 2011
    Publication date: June 13, 2013
    Applicant: EPOWERSOFT, INC.
    Inventors: Richard J. Brown, Hui Nei, Andrew Edwards, Isik Kizilyalli, David Bour, Thomas Prunty, Linda Romano, Madhan Raj