Abstract: The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such material preferably is conductive so as to provide electrical connection for its associated semiconductor device.

Abstract: The light array of this invention includes a number of columns and rows of LED's connected in a series/parallel combination. The series parallel combinations effectively optimize the impedance, accommodate failure rate, facilitate light mixing, provide a means of imbedding redundancy, and common cathodes or anodes. This arrangement provides a superior light source for consumer, industrial and specialty markets in respect to mean time between failure, process control, radiant intensity, wavelength mixing, power requirements and other characteristics of the light source. Each column includes a number of rows of plural LED's. The LED's in each row are wired in series and each column is wired in parallel so that if one LED fails only the LED's connected in series with the failed LED will also fail. There is redundancy in the circuit as well as the arrays so that if there are failures different current carrying elements or different series LEDS will automatically by powered on.

Abstract: Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 ?J per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz.

Abstract: Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of silicon using this focused spot size is greater than 200 &mgr;J per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz.