Abstract: A method of preparing a piezoelectric single crystal with high piezoelectricity and near- perfect transparency. The method includes depositing electrodes on two opposition surfaces of a piezoelectric single crystal which is a ferroelectric crystal; AC-poling the piezoelectric single crystal through the electrodes by repeatedly changing polarity of an AC electric field; and after polarization, removing the electrodes on the two opposition surfaces of the piezoelectric single crystal and then depositing Ag nanowire or indium tin oxide (ITO) as electrodes on the two opposition surfaces of the piezoelectric single crystal. Repeatedly changing the polarity of the polarized electric field can increase the domain size of the ferroelectric crystal, or reduce the domain wall density of the domain structure, thereby improving the transparency of the piezoelectric single crystal having high piezoelectric.

Abstract: A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI? is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII? is Nb5+ or Zr4+; 0<x?0.05; 0.02<y<0.7; and 0?z?1, provided that if either MI? or MII? is Zr4+, both MI? and MII? are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3 from the feeding material by a Bridgman method.

Abstract: The present invention discloses a transparent piezoelectric single crystal with high piezoelectricity and a preparation method thereof, a photoacoustic transducer, a transparent actuator and an optical-electro-mechanical coupling device prepared from the transparent piezoelectric single crystal with high piezoelectricity. The piezoelectric single crystal is a binary/ternary relaxor-PT based ferroelectric crystal poled by an AC electric field, and has ultrahigh piezoelectricity and excellent transparency.

Abstract: Embodiments of the invention can be directed to controlling and/or engineering the size and/or volume of polar nanoregions (PNRs) of ferroelectric polycrystalline material systems. Some embodiments can achieved this via composition modifications to cause changes in the PNRs and/or local structure. Some embodiments can be used to control and/or engineer dielectric, piezoelectric, and/or electromechanical properties of polycrystalline materials. Controlling and/or engineering the PNRs may facilitate improvements to the dielectric, piezoelectric, and/or electromechanical properties of materials. Controlling and/or engineering the PNRs may further facilitate generating a piezoelectric material that may be useful for many different piezoelectric applications.

Abstract: A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d15 piezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated d33 piezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d34. d35 and d36 in the same temperature range. The piezoelectric element can also have an electromechanical coupling factor k15 variation of less than 7%, and d15 and rotated d33 piezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C.

Abstract: Embodiments of the invention can be directed to controlling and/or engineering the size and/or volume of polar nanoregions (PNRs) of ferroelectric polycrystalline material systems. Some embodiments can achieved this via composition modifications to cause changes in the PNRs and/or local structure. Some embodiments can be used to control and/or engineer dielectric, piezoelectric, and/or electromechanical properties of polycrystalline materials. Controlling and/or engineering the PNRs may facilitate improvements to the dielectric, piezoelectric, and/or electromechanical properties of materials. Controlling and/or engineering the PNRs may further facilitate generating a piezoelectric material that may be useful for many different piezoelectric applications.

Abstract: A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI? is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII? is Nb5 or Zr4+; 0<x?0.05; 0.02<y<0.7; and 0?z?1, provided that if either MI? or MII? is Zr4+, both MI? and MII? are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3 from the feeding material by a Bridgman method.

Abstract: A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d15 piezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated d33 piezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d34. d35 and d36 in the same temperature range. The piezoelectric element can also have an electromechanical coupling factor k15 variation of less than 7%, and d15 and rotated d33 piezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C.

Abstract: A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d15 piezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated d33 piezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d34. d35 and d36 in the same temperature range. The piezoelectric element can also have an electromechanical coupling factor k15 variation of less than 7%, and d15 and rotated d33 piezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d15 piezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated d33 piezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d34. d35 and d36 in the same temperature range. The piezoelectric element can also have an electromechanical coupling factor k15 variation of less than 7%, and d15 and rotated d33 piezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: A ternary polycrystalline material based on lead hafnate (PbHfO3) and having improved dielectric, piezoelectric, and/or thermal stability properties. The Pb(Hf,Ti)O3 based material can exhibit enhanced electromechanical coupling factors when compared to PZT based ceramics and can be used as high performance actuators, piezoelectric sensors and/or ultrasonic transducers. The ternary polycrystalline material can have a perovskite crystal structure with an ABO3 formula and can be characterized by a substitution of heterovalent acceptor and donor ions at A or B (Zr/Hf) sites.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.

Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.