Patents by Inventor Thomas Raker
Thomas Raker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10211057Abstract: A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency ? of less than 0.7.Type: GrantFiled: August 4, 2011Date of Patent: February 19, 2019Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Anton Mauder, Thomas Raker, Hans-Joachim Schulze, Wolfgang Werner
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Patent number: 9412854Abstract: An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.Type: GrantFiled: October 20, 2010Date of Patent: August 9, 2016Assignee: Infineon Technologies Austria AGInventors: Hans-Peter Felsl, Hans-Joachim Schulze, Franz-Josef Niedernostheide, Thomas Raker
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Publication number: 20160111508Abstract: A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension.Type: ApplicationFiled: December 21, 2015Publication date: April 21, 2016Applicant: Infineon Technologies AGInventors: Christian Foerster, Georg Ehrentraut, Frank Pfirsch, Thomas Raker
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Patent number: 9105682Abstract: Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.Type: GrantFiled: February 28, 2011Date of Patent: August 11, 2015Assignee: Infineon Technologies Austria AGInventors: Hans-Peter Felsl, Thomas Raker, Hans-Joachim Schulze, Franz-Josef Niedernostheide
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Patent number: 8872264Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: GrantFiled: June 13, 2013Date of Patent: October 28, 2014Assignee: Infineon Technologies Austria AGInventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Publication number: 20130270632Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: ApplicationFiled: June 13, 2013Publication date: October 17, 2013Inventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Patent number: 8482062Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: GrantFiled: September 11, 2012Date of Patent: July 9, 2013Assignee: Infineon Technologies Austria AGInventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Publication number: 20130001640Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: ApplicationFiled: September 11, 2012Publication date: January 3, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Patent number: 8264033Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: GrantFiled: July 21, 2009Date of Patent: September 11, 2012Assignee: Infineon Technologies Austria AGInventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Publication number: 20120217539Abstract: Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.Type: ApplicationFiled: February 28, 2011Publication date: August 30, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Hans Peter Felsl, Thomas Raker, Hans-Joachim Schulze, Franz-Josef Niedernostheide
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Publication number: 20120098097Abstract: An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.Type: ApplicationFiled: October 20, 2010Publication date: April 26, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Hans-Peter Felsl, Hans-Joachim Schulze, Franz-Josef Niedernostheide, Thomas Raker
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Publication number: 20120037955Abstract: A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency ? of less than 0.7.Type: ApplicationFiled: August 4, 2011Publication date: February 16, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Franz Hirler, Anton Mauder, Thomas Raker, Hans-Joachim Schulze, Wolfgang Werner
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Publication number: 20110309423Abstract: A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension.Type: ApplicationFiled: August 25, 2011Publication date: December 22, 2011Applicant: INFINEON TECHNOLOGIES AGInventors: Christian Foerster, Georg Ehrentraut, Frank Pfirsch, Thomas Raker
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Patent number: 7952166Abstract: A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate.Type: GrantFiled: May 22, 2008Date of Patent: May 31, 2011Assignee: Infineon Technologies Austria AGInventors: Franz Hirler, Thomas Raker
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Publication number: 20110018029Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: ApplicationFiled: July 21, 2009Publication date: January 27, 2011Applicant: Infineon Technologies Austria AGInventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Patent number: 7768093Abstract: A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.Type: GrantFiled: March 13, 2009Date of Patent: August 3, 2010Assignee: Infineon Technologies Austria AGInventors: Hans-Joachim Schulze, Frank Hille, Thomas Raker
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Publication number: 20090289690Abstract: A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate.Type: ApplicationFiled: May 22, 2008Publication date: November 26, 2009Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Franz Hirler, Thomas Raker
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Publication number: 20090206440Abstract: A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.Type: ApplicationFiled: March 13, 2009Publication date: August 20, 2009Inventors: Hans-Joachim Schulze, Frank Hille, Thomas Raker
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Patent number: 7541660Abstract: A The semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region.Type: GrantFiled: April 20, 2006Date of Patent: June 2, 2009Assignee: Infineon Technologies Austria AGInventors: Hans-Joachim Schulze, Frank Hille, Thomas Raker
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Publication number: 20080179666Abstract: A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension.Type: ApplicationFiled: January 24, 2008Publication date: July 31, 2008Applicant: INFINEON TECHNOLOGIES AGInventors: Christian Foerster, Georg Ehrentraut, Frank Pfirsch, Thomas Raker