Abstract: In an embodiment an optoelectronic component includes a carrier having a mounting surface including a reflective coating, a semiconductor chip arranged on the carrier and a corrosion protection layer located on the semiconductor chip, the semiconductor chip being arranged in a vertical direction between the reflective coating and the corrosion protection layer, wherein the reflective coating includes a barrier layer disposed in the vertical direction in places between the semiconductor chip and the reflective coating, wherein the barrier layer includes an inorganic material and serves as an additional corrosion protection layer for the reflective coating, wherein the barrier layer has a vertical layer thickness between 1 nm and 100 nm, inclusive, and wherein the corrosion protection layer has a vertical layer thickness between 10 nm and 5000 nm, inclusive.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.

Abstract: In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit radiation and moisture-stable glass particles arranged in a beam path of the semiconductor chip, wherein the moisture-stable glass particles are filler, scattering particles and/or filter particles, wherein each of the moisture-stable glass particles comprises a moisture-sensitive core of a glass material, and wherein the core is covered with at least one moisture-stable inorganic coating.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.

Abstract: An optoelectronic device includes at least one optoelectronic semiconductor chip that emits radiation, at least one metallic reflecting surface, at least one functional component having a component surface different from the metallic reflecting surface, and a barrier layer stack for protection against corrosive gases arranged both on the at least one metallic reflecting surface and the component surface, wherein the barrier layer stack includes at least one inorganic oxide, oxynitride or nitride layer and at least one plasma-polymerized siloxane layer.

Abstract: An optoelectronic component includes a carrier having a chip mounting face, wherein the chip mounting face has a reflection coating, and an optoelectronic semiconductor chip adhesively bonded on the reflection coating by an adhesive so that the reflection coating is subdivided into a first subsection covered by the semiconductor chip and a second subsection, which is free of the semiconductor chip, wherein the adhesive has reflection particles that reflect electromagnetic radiation emitted by the semiconductor chip, and the second subsection is at least partially covered by a corrosion protection layer.

Abstract: A platelet for an optoelectronic device, a method for producing an optoelectronic device and an optoelectronic device are disclosed. In an embodiment, a platelet includes silicone and chemical compounds located on at least one surface of the platelet, wherein each chemical compound comprises an anchor group and a head group, wherein the chemical compounds are bonded to the silicone by the anchor group, and wherein an adhesion on the at least one surface is reduced by the head groups of the chemical compounds.

Abstract: An optoelectronic device includes an active layer stack that generates or detects radiation, a radiation entrance or radiation exit surface including an inorganic material, and a protective layer disposed over the radiation entrance or radiation exit surface and including chemical compounds each containing an anchor group and a head group, wherein the anchor group is bonded to the inorganic material, and an encapsulation laterally surrounding at least the active layer stack or at least the active layer stack and the protective layer.

Abstract: An optoelectronic device includes at least one optoelectronic semiconductor chip that emits radiation, at least one metallic reflecting surface, at least one functional component having a component surface different from the metallic reflecting surface, and a barrier layer stack for protection against corrosive gases arranged both on the at least one metallic reflecting surface and the component surface, wherein the barrier layer stack includes at least one inorganic oxide, oxynitride or nitride layer and at least one plasma-polymerized siloxane layer.

Abstract: An optoelectronic component includes a carrier having a chip mounting face, wherein the chip mounting face has a reflection coating, and an optoelectronic semiconductor chip adhesively bonded on the reflection coating by an adhesive so that the reflection coating is subdivided into a first subsection covered by the semiconductor chip and a second subsection, which is free of the semiconductor chip, wherein the adhesive has reflection particles that reflect electromagnetic radiation emitted by the semiconductor chip, and the second subsection is at least partially covered by a corrosion protection layer.

Abstract: The invention relates to an optoelectronic device (1) comprising at least one outer surface (2) containing silicone (20), chemical compounds, comprising an anchor group (3) and a head group (4), being bonded to the silicone via the anchor group, and the adhesion of the regions of the silicone (2) present on the outer surface being reduced owing to the head groups of the chemical compounds. A method for producing an optoelectronic device is also disclosed.

Abstract: The invention relates to an optoelectronic device (1) comprising at least one outer surface (2) containing silicone (20), chemical compounds, comprising an anchor group (3) and a head group (4), being bonded to the silicone via the anchor group, and the adhesion of the regions of the silicone (2) present on the outer surface being reduced owing to the head groups of the chemical compounds. A method for producing an optoelectronic device is also disclosed.