Abstract: The sensor comprises a reference bolometer and a plurality of sensing bolometers. Each sensing bolometer is arranged adjacent to the reference bolometer. Each bolometer comprises (i) a substrate, (ii) a cap structure connected to the substrate, the cap structure configured to define a cavity between an inner surface of the cap structure and a first surface of the substrate, (iii) an absorber connected the substrate and arranged within the cavity, the absorber configured to absorb infrared radiation within the cavity, and (iv) a readout circuit connected to the absorber and configured to provide a signal that indicates an amount of infrared radiation absorbed by the absorber. The cap structure of the reference bolometer blocks infrared radiation from entering the cavity from outside the cap structure. The cap structure of each sensing bolometers allows infrared radiation to enter the cavity from outside the cap structure.

Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: A vertical Hall Effect sensor assembly in one embodiment includes a first sensor with a first doped substrate, a first doped well, the first doped well having a doping opposite to the first doped substrate, a first endmost inner contact accessible at a first surface of the first sensor and located at a first end portion of the first doped well, a first intermediate inner contact accessible at the first surface and located between the first endmost inner contact and a second end portion of the first doped well, and a first electrode positioned on the first surface immediately adjacent to the first endmost inner contact and the first intermediate inner contact, the first electrode electrically isolated from the first doped well, and a first voltage source operably connected to the first electrode.

Abstract: A method and system for providing increased accuracy in a CMOS sensor system in one embodiment includes a plurality of sensor elements having a first terminal and a second terminal on a complementary metal oxide semiconductor substrate, a first plurality of switches configured to selectively connect the first terminal to a power source and to selectively connect the first terminal to a readout circuit, and a second plurality of switches configured to selectively connect the second terminal to the power source and to selectively connect the second terminal to the readout circuit.

Abstract: In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.

Abstract: In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.

Abstract: A vertical Hall Effect sensor assembly in one embodiment includes a first sensor with a first doped substrate, a first doped well, the first doped well having a doping opposite to the first doped substrate, a first endmost inner contact accessible at a first surface of the first sensor and located at a first end portion of the first doped well, a first intermediate inner contact accessible at the first surface and located between the first endmost inner contact and a second end portion of the first doped well, and a first electrode positioned on the first surface immediately adjacent to the first endmost inner contact and the first intermediate inner contact, the first electrode electrically isolated from the first doped well, and a first voltage source operably connected to the first electrode.

Abstract: A magnetic field measuring system is disclosed. The magnetic field measuring system includes a substrate, a conductive well formed in the substrate, the well having a first side with a first length, a first contact electrically coupled to the conductive well at a first location of the first side, a second contact electrically coupled to the conductive well at a second location of the first side, wherein the distance between the first location and the second location is less than the first length, a stimulus circuit coupled to the first contact and the second contact, and a sensor for identifying a property indicative of the length of a current path from the first location to the second location through the conductive well.

Abstract: A complementary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped substrate, a doped central island extending downwardly within the doped substrate from an upper surface of the doped substrate, and a first doped outer island extending downwardly within the doped substrate from the upper surface of the doped substrate, the first outer island electrically isolated from the central island within an upper portion of the substrate, and electrically coupled to the central island within a lower portion of the substrate.

Abstract: A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.

Abstract: A magnetic field measuring system is disclosed. The magnetic field measuring system includes a substrate, a conductive well formed in the substrate, the well having a first side with a first length, a first contact electrically coupled to the conductive well at a first location of the first side, a second contact electrically coupled to the conductive well at a second location of the first side, wherein the distance between the first location and the second location is less than the first length, a stimulus circuit coupled to the first contact and the second contact, and a sensor for identifying a property indicative of the length of a current path from the first location to the second location through the conductive well.

Abstract: A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.

Abstract: A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped substrate, a doped central island extending downwardly within the doped substrate from an upper surface of the doped substrate, and a first doped outer island extending downwardly within the doped substrate from the upper surface of the doped substrate, the first outer island electrically isolated from the central island within an upper portion of the substrate, and electrically coupled to the central island within a lower portion of the substrate.

Abstract: A method and system for providing increased accuracy in a CMOS sensor system in one embodiment includes a plurality of sensor elements having a first terminal and a second terminal on a complementary metal oxide semiconductor substrate, a first plurality of switches configured to selectively connect the first terminal to a power source and to selectively connect the first terminal to a readout circuit, and a second plurality of switches configured to selectively connect the second terminal to the power source and to selectively connect the second terminal to the readout circuit.