Abstract: The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ?20 nm to about ?1000 nm and the charge neutral metal amide compound has the Formula Ia.

Abstract: The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.

Abstract: The present invention relates to an electronic device comprising a hole injection layer and/or a hole transport layer and/or a hole generating layer, wherein at least one of the hole injection layer, the hole transport layer and the hole generating layer comprises a coordination complex comprising at least one electropositive atom M having an electronegativity value according to Allen of less than 2.4 and at least one ligand L having the following structure: (I) wherein R1 and R2 are independently selected from the group, consisting of C1 to C30 hydrocarbyl groups and C2 to C30 heterocyclic groups, wherein R1 and/or R2 may optionally be substituted with at least one of CN, F, Cl, Br and I.

Abstract: The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib)

Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (1a) or (1b) wherein A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1; R1=electron withdrawing gro

Abstract: The present invention relates to an electronic device comprising at least one layer comprising a borate salt, wherein the borate salt is comprised in the layer comprising the borate salt In an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the layer, a display device comprising the same and a method for preparing the same.

Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.

Abstract: An active OLED display, comprising a plurality of OLED pixels, each of the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers is provided between and in contact with the cathode and the anode and comprises an electron transport layer, a hole transport layer, and a light emitting layer provided between the hole transport layer and the electron transport layer, and a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, a common hole transport layer is formed by the hole transport layers provided in the stack of organic layers of the plurality of OLED pixels, the common hole transport layer comprising a hole transport matrix material and at least one electrical p-dopant, and the electrical conductivity of the hole transport material being lower than 1×10?3 S·m?1 and higher than 1×10?8 S·m?1.

Abstract: The present invention relates to an electronic device comprising, between a first electrode and a second electrode, at least one hole injection layer and/or at least one hole generating layer, wherein the hole injection layer and/or the hole generating layer consists of a bismuth carboxylate complex, and a to a method for preparing the same.

Abstract: The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ?20 nm to about ?1000 nm and the charge neutral metal amide compound has the Formula Ia.

Abstract: The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia.

Abstract: The present invention relates to an organic light emitting diode including an anode electrode, a cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer are arranged between the anode electrode and the cathode electrode and the organic semiconductor layer includes a substantially metallic rare earth metal dopant and a first matrix compound, the first matrix compound including at least two phenanthrolinyl groups as well as to a method for preparing the same.

Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.

Abstract: An active OLED display, comprising a plurality of OLED pixels, each of the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers is provided between and in contact with the cathode and the anode and comprises an electron transport layer, a hole transport layer, and a light emitting layer provided between the hole transport layer and the electron transport layer, and a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, a common hole transport layer is formed by the hole transport layers provided in the stack of organic layers of the plurality of OLED pixels, the common hole transport layer comprising a hole transport matrix material and at least one electrical p-dopant, and the electrical conductivity of the hole transport material being lower than 1×10?3 S·m?1 and higher than 1×10?8 S·m?1.

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Abstract: The invention relates to an organic light emitting device, in a layered structure, comprising a substrate, a bottom electrode, a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, an electrically active region, the electrically active region comprising one or more organic layers and being provided between and in electrical contact with the bottom electrode and the top electrode, a light emitting region provided in the electrically active region, and a roughening layer, the roughening layer being provided as non-closed layer in the electrically active region and providing an electrode roughness to the top electrode by roughening the top electrode on at least one an inner side facing the electrically active region and an outer side of the top electrode facing away from the electrically active region. Furthermore, a further organic light emitting device, and a method of producing an organic light emitting device are provided.

Abstract: The invention relates to an organic light emitting device, in a layered structure, comprising a substrate, a bottom electrode, a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, an electrically active region, the electrically active region comprising one or more organic layers and being provided between and in electrical contact with the bottom electrode and the top electrode, a light emitting region provided in the electrically active region, and a roughening layer, the roughening layer being provided as non-closed layer in the electrically active region and providing an electrode roughness to the top electrode by roughening the top electrode on at least one an inner side facing the electrically active region and an outer side of the top electrode facing away from the electrically active region. Furthermore, a further organic light emitting device, and a method of producing an organic light emitting device are provided.