Patents by Inventor Thomas Ruckes
Thomas Ruckes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8471238Abstract: Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.Type: GrantFiled: September 15, 2005Date of Patent: June 25, 2013Assignee: Nantero Inc.Inventors: Jonathan W. Ward, Mitchell Meinhold, Claude L. Bertin, Benjamin Schlatka, Brent M. Segal, Thomas Ruckes
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Patent number: 7781862Abstract: A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.Type: GrantFiled: November 15, 2005Date of Patent: August 24, 2010Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Mitchell Meinhold, Steven L. Konsek, Thomas Ruckes, Max Strasburg, Frank Guo, X. M. Henry Huang, Ramesh Sivarajan
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Publication number: 20080231413Abstract: Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.Type: ApplicationFiled: April 29, 2008Publication date: September 25, 2008Applicant: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Ruckes, Brent M. Segal, Jonathan W. Ward
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Patent number: 7394687Abstract: A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.Type: GrantFiled: November 15, 2005Date of Patent: July 1, 2008Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Frank Guo, Thomas Ruckes, Steven L. Konsek, Mitchell Meinhold, Max Strasburg, Ramesh Sivarajan, X. M. H. Huang
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Patent number: 7365632Abstract: Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.Type: GrantFiled: September 20, 2005Date of Patent: April 29, 2008Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Ruckes, Brent M. Segal, Jonathan W. Ward
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Publication number: 20080036356Abstract: Light emitters using nanotubes and methods of making same. A light emitter includes a nanotube article in electrical communication with a first and a second contact, a substrate having a predefined region with a relatively low thermal conductivity said region in predefined physical relation to said nanotube article; and a stimulus circuit in electrical communication with the first and second contacts. The stimulus circuit provides electrical stimulation sufficient to induce light emission from the nanotube article in the proximity of the predefined region. The predefined region is a channel formed in the substrate or a region of material with relatively low thermal conductivity. The light emitter can be integrated with semiconductor circuits including CMOS circuits. The light emitter can be integrated into optical driver circuits (on- and off-chip drivers) and opto-isolators.Type: ApplicationFiled: September 15, 2005Publication date: February 14, 2008Applicant: Nantero, Inc.Inventors: Jonathan W. Ward, Mitchell Meinhold, Claude L. Bertin, Benjamin Schlatka, Brent M. Segal, Thomas Ruckes
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Publication number: 20080012047Abstract: A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.Type: ApplicationFiled: November 15, 2005Publication date: January 17, 2008Applicant: Nantero, Inc.Inventors: Claude Bertin, Mitchell Meinhold, Steven Konsek, Thomas Ruckes, Max Strasburg, Frank Guo, X. M. Huang, Ramesh Sivarajan
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Publication number: 20070236325Abstract: Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.Type: ApplicationFiled: September 20, 2005Publication date: October 11, 2007Applicant: Nantero, Inc.Inventors: Claude Bertin, Thomas Ruckes, Brent Segal, Jonathan Ward
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Patent number: 7245520Abstract: A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive nanotube, and a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between a channel electrode and an output node. Input nodes of the first and second inverters are coupled to the set electrodes and the output nodes of the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or in a shadow memory or store mode to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode to transfer the state of the nanotube switching elements to the electronic memory.Type: GrantFiled: September 20, 2005Date of Patent: July 17, 2007Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Ruckes, Brent M. Segal
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Publication number: 20070127285Abstract: Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line.Type: ApplicationFiled: September 20, 2005Publication date: June 7, 2007Applicant: Nantero, Inc.Inventors: Claude Bertin, Thomas Ruckes, Brent Segal