Abstract: An optical modulator that is adapted to modulate a light signal at very high RF frequencies and provide the modulating RF signal to equipment separate from the modulator is disclosed. The modulator includes a Mach-Zehnder Modulator in which light loses due to the crossing of the RF waveguide conductors and the optical waveguides are reduced. In addition, problems arising from asynchrony between the RF signals and the optical signals are reduced. The modulator also reduces signal losses due to resonances in the modulator. The modulator can be configured to be used in test probes that require a compact configuration that is adapted to designs having multiple test probes that are proximate to each other.

Abstract: A PCS that comprises a photo-conductive layer of NB material sandwiched between a top confinement layer and a bottom confinement layer. Both confinement layers are layers of WB material. NB material and WB material are semiconductor materials. NB material has a smaller band-gap energy than WB material. The top confinement layer and the photo-conductive layer have opposite conductivity types. A first electrode and a second electrode, separated from each other by a gap and are located on the surface of the top confinement layer remote from the photo-conductive layer. The photo-conductive layer provides a low-resistance conduction path between the electrodes when the photo-conductive layer is illuminated with incident light of an appropriate wavelength and intensity.

Abstract: Method for deposit of a p type dopant from a dopant layer into a predetermined region of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined region. A second semiconductor layer, doped with a lower concentration of an n type dopant, is later deposited so that the high concentration p type dopant layer lies between the predetermined region and the n type dopant layer. The p type dopant is diffused into the predetermined region by thermally driven diffusion, which may be carried out at a lower temperature or for a shorter diffusion time interval than with conventional diffusion, and p type dopant diffusion may extend over greater distances.