Abstract: A top-most layer (64) is formed over a bond pad layer (62) and under a passivation layer (68) and a polyimide layer (72). Openings (70 and 74) are formed within the passivation layer (68) and the polyimide layer (72) to expose the top-most layer (64), which protects the bond pad layer (62) during the formation of the openings (70 and 74). In one embodiment, the exposed top-most layer (64) is selectively etched using hydrogen peroxide and an amine, such as ammonium hydroxide. Because the chemistry does not attack the bond pad layer (62), the bond pad layer's thickness is not decreased and thus, reliability of the bond pad is maintained.

Abstract: A method is provided for reducing corrosion in openings on a semiconductor wafer. An etched opening is provided in a dielectric material on the semiconductor wafer. The etched opening and the dielectric material are cleaned with a basic solution. The exposed metal surface is treated with a hydrogen peroxide solution before exposing the exposed metal surface to an aqueous solution.

Abstract: A method is provided for reducing corrosion of metal surfaces that are comprised of at least aluminum and copper. An organic mask is exposed with a pattern. The organic mask is then subsequently developed, thereby producing open areas in the organic mask that expose portions of the metal surfaces. Applying a solution of hydrogen peroxide to the exposed metal surface, thereby creating a protective film prior to rinsing the exposed metal surface in an aqueous solution.

Abstract: An etchant solution comprised of water and:(a) about 65% to 75% by weight phosphoric acid;(b) about 1% to 5% by weight nitric acid;(c) about 0% to 15% by weight acetic acid; and(d) about 0.005% to about 5% of an amine oxide surfactant having the formula (I): ##STR1## wherein R.sub.1 and R.sub.2 are each independently selected from the group consisting of lower alkyl group having 1-4 carbon atoms and lower alkoxy groups having 1-4 carbon atoms and R.sub.3 is a higher alkyl group having 8 to 18 carbon atoms or a mixture thereof.

Abstract: Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of an anionic sulfate ester of alkylphenol polyglycidol ether. Preferred embodiments of the anionic sulfate esters of alkylphenol polyglycidol ethers may be represented by the formula: ##STR1## wherein R represents an alkyl group having from about 4 to about 12 carbon atoms, x is from about 3 to about 15, M represents H, an alkali metal, an alkaline earth metal, ammonium, or an amine, and y is from 0.2 to about 4. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF to from about 3:1 to about 50:1. The novel etching solutions of the present invention have excellent wetting characteristics and retain their wetting properties after extended periods of continuous filtration through sub-micron filters.

Abstract: Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of a nonionic alkyl amine glycidol adduct. Preferred embodiments of the nonionic alkyl amine glycidol adducts employed in the etching solution of the present invention are those represented by the formulas: ##STR1## wherein R represents an alkyl group having from about 8 to about 18 carbon atoms and mixtures thereof,Y represents H, ##STR2## or mixtures thereof; n is from about 1 to about 20; andm+n are from about 2 to about 20; or ##STR3## wherein R' and R" represent independently selected alkyl groups, the sum total of carbon atoms in R'+R" being from about 8 to about 18; andX is from 1 to about 20.The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF to from about 3:1 to about 50:1.

Abstract: Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of a nonionic alkyl polysaccharide having the formula:RO(R'O).sub.x Z.sub.ywherein R is alkyl, alkylphenol, hydroxyalkyl, hydroxy alkylphenol, or mixtures thereof and said alkyl groups contain from about 6 to about 18 carbon atoms, R' contains from 1 to about 4 carbon atoms, x is from 0 to about 5, Z is a moiety derived from a reducing saccharide containing from 5 to 6 carbon atoms, and y is from about 1 to about 5. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF of from about 3:1 to about 50:1.The novel etching solutions of the present invention have excellent wetting characteristics, will not incorporate metallic ions, and retain their wetting properties after extended periods of continuous filtration.

Abstract: Etching solutions used to etch, for example, silicon dioxide coated substrates in the manufacture of integrated circuits comprise an aqueous solution of ammonium fluoride and a wetting amount of a nonionic alkylphenol polyglycidol ether having the formula: ##STR1## wherein R is an alkyl group having from about 4 to about 12 carbon atoms, and x is from about 3 to about 15. The etching solutions preferably contain hydrogen fluoride in a volume ratio of NH.sub.4 F to HF of from about 3:1 to about 50:1. The novel etching solutions of the present invention have excellent wetting characteristics, will not incorporate metallic ions, and retain their wetting properties after extended periods of continuous filtration.