Abstract: A high density ASIC cell provides customization solely at the polysilicon #2, insulator #3 levels. High density is achieved by permitting a metal #1 trace to traverse an underlying transistor, without requiring space between adjacent transistors to facilitate traversing interconnects. Oversized collector and emitter traces at the polysilicon #1 level make downward contact with the collector and base regions of the underlying transistor, and provide redundant upward contact with collector and emitter polysilicon #2 traces. Contact between the transistor base and a base polysilicon #2 trace is also made. The polysilicon #2 emitter, base and collector traces provide a replicated, unvarying pattern that preferably defines a 3.times.3 matrix of potential contact points for overlying metal #1 traces to contact the underlying transistor's emitter, base and collector. A metal #1 trace can traverse this 3.times.3 matrix simply by not providing openings in the insulating #3 layer beneath the traverse.

Abstract: A DC-coupled active pull-down ECL circuit ("LS-APD") has a pull-down drive that self-adjusts to load conditions. A current source sinks emitter current from first and second push-pull transistors. The input signal is coupled to the base of the first transistor, whose inverted collector signal is coupled to the base of a pull-up transistor whose emitter is the LS-APD output voltage node. (A non-inverting configuration provides the input signal to the base of the second transistor.) The pull-up transistor is coupled between the upper rail and the second transistor's collector load resistor. A pull-down transistor has its base coupled to the second transistor's collector, its collector coupled to the LS-APD output node, and its emitter coupled to a node receiving a regulated Vreg voltage. As load capacitance increases, the output voltage takes longer to drop sufficiently to nearly turn-off the pull-down transistor.

Abstract: A bit line discharge and sense circuit is provided for use with a static RAM that includes a row and column array of memory cells addressable via first and second bit lines and also a row select line. Each memory cell includes a transistor pair, wherein the first and second bit lines are coupled to an emitter of a first and second transistor comprising the transistor pair. The invention couples two current sources via the associated bit lines to the emitter of each transistor in the cell. A first current source is coupled when the cell is selected and provides a first current value having a bit line capacitance discharge current component and a first transistor read current component. A second current source is coupled to the same emitter when the cell is selected, and provides a lower current value. The first current source rapidly discharges capacitance associated with the associated bit line on the selected cell.

Abstract: A compensation current generator circuit for generating a compensation current which is inversely proportional to the current gain of a bipolar transistor is presented. The current generated by the compensation current generator circuit of the present invention compensates for current gain fluctuations caused by temperature and/or process variations which can adversely affect the operation of an integrated circuit device.

Abstract: An improved sense amplifier circuit for sensing information in the cells of a semiconductor memory device is presented. The sense amplifier circuit as presented includes AC-coupled positive feedback means to provide a reduction in sensing delay time, and thus, faster memory access time.

Abstract: A current source for voltage regulators used in integrated emitter coupled logic (ECL) circuits to avoid variations in output current due to fluctuations in the voltage source. Transistors of one polarity type are employed. A current source (11) is connected to an output node (15). A transistor (Q2) generates a current proportional to the output voltage (15) to develop a voltage across a resistor (12) in turn controlling a transistor (Q3) in series with a resistor (14) and a diode connected transistor (Q4). By current mirror action the current flowing in transistor (Q4) is mirrored (I.sub.Q1) by transistor (Q1). The output current (I.sub.0) is the current flowing through resistor (11) less the current (I.sub.Q1).

Abstract: A CMOS Schmitt trigger circuit displays a lower trigger point that is one N channel transistor threshold above the negative power supply potential and an upper trigger point that is one P channel transistor threshold below the positive power supply potential. Thus, the circuit hysteresis loop is related to supply potential and device threshold values. When the trigger circuit is employed in a relaxation oscillator configuration, the oscillator frequency is independent of power supply voltage and manufacturing variables in the CMOS process that vary transistor threshold values.

Abstract: A power up circuit for an associated digital circuit is disclosed which prevents noise from falsely resetting the associated digital circuit after completion of the powering up function. The power up circuit has a series connection of a first capacitor and a high impedance coupled between the power supply and ground. The high impedance is connected in parallel with the source and drain electrodes of an enhancement type field effect transistor. The node of the high impedance and the first capacitor is connected to an inverting amplifier which produces an inverted output after the input signal falls to a threshold potential. The output of the inverting amplifier is connected to the gate of the field effect transistor and to a second capacitor which is connected to ground. The output of the inverting amplifier is applied to the reset line of the associated digital circuit to cause resetting of the digital circuit upon the connection of the power supply to the digital circuit.