Patents by Inventor Thomas Sand Jespersen
Thomas Sand Jespersen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11950516Abstract: The present disclosure relates to a method for manufacturing of specially designed substrates for growth of nanostructures and patterned growth on said nanostructures. The present disclosure further relates to nanostructures, in particular hybrid semiconductor nanostructures with patterned growth of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of quantum devices that have not been contaminated by ex-situ processes.Type: GrantFiled: March 25, 2019Date of Patent: April 2, 2024Assignee: University of CopenhagenInventors: Thomas Sand Jespersen, Jesper Nygård, Damon Carrad, Martin Bjergfelt
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Publication number: 20220157932Abstract: The present disclosure further relates to nanostructures, in particular hybrid nanostructures with patterned growth of various layers for use in nanoscale electronic devices, such as hybrid semiconductor nanostructures with patterned growth and/or deposition of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of nanoscale electronic devices that have not been contaminated by ex-situ processes.Type: ApplicationFiled: July 8, 2019Publication date: May 19, 2022Inventors: Thomas Sand Jespersen, Jesper Nygård, Damon Carrad, Martin Bjergfelt
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Publication number: 20210083167Abstract: The present disclosure relates to a method for manufacturing of specially designed substrates for growth of nanostructures and patterned growth on said nanostructures. The present disclosure further relates to nanostructures, in particular hybrid semiconductor nanostructures with patterned growth of superconducting material for use in quantum devices. The presently disclosed method can be utilized for in-situ manufacturing of quantum devices that have not been contaminated by ex-situ processes.Type: ApplicationFiled: March 25, 2019Publication date: March 18, 2021Inventors: Thomas Sand Jespersen, Jesper Nygård, Damon Carrad, Martin Bjergfelt
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Patent number: 10903411Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.Type: GrantFiled: January 7, 2019Date of Patent: January 26, 2021Inventors: Charles M. Marcus, Peter Krogstrup, Thomas Sand Jespersen, Jesper Nygård, Karl Petersson, Thorvald Larsen, Ferdinand Kuemmeth
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Patent number: 10720562Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.Type: GrantFiled: July 10, 2019Date of Patent: July 21, 2020Assignee: University of CopenhagenInventors: Peter Krogstrup, Thomas Sand Jespersen, Charles M. Marcus, Jesper Nygård
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Patent number: 10669647Abstract: The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.Type: GrantFiled: June 27, 2016Date of Patent: June 2, 2020Assignee: University of CopenhagenInventors: Peter Krogstrup, Charles Marcus, Thomas Sand Jespersen, Jesper Nygård
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Publication number: 20190363237Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.Type: ApplicationFiled: July 10, 2019Publication date: November 28, 2019Inventors: Peter Krogstrup, Thomas Sand Jespersen, Charles M. Marcus, Jesper Nygård
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Publication number: 20190273196Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.Type: ApplicationFiled: January 7, 2019Publication date: September 5, 2019Inventors: Charles M. Marcus, Peter Krogstrup, Thomas Sand Jespersen, Jesper Nygård, Karl Petersson, Thorvald Larsen, Ferdinand Kuemmeth
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Patent number: 10367132Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.Type: GrantFiled: July 2, 2015Date of Patent: July 30, 2019Assignee: University of CopenhagenInventors: Peter Krogstrup, Thomas Sand Jespersen, Charles M. Marcus, Jesper Nygård
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Patent number: 10177297Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.Type: GrantFiled: March 4, 2015Date of Patent: January 8, 2019Assignee: University of CopenhagenInventors: Charles M. Marcus, Peter Krogstrup, Thomas Sand Jespersen, Jesper Nygård, Karl Petersson, Thorvald Larsen, Ferdinand Kuemmeth
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Publication number: 20180195201Abstract: The present disclosure relates to a method for producing a network of interconnected nanostructures comprising the steps of: providing a substantially plane substrate; growing a plurality of elongated nanostructures from the substrate; kinking the growth direction of at least a part of the nanostructures such that at least part of the kinked nanostructures are growing in a network plane parallel to the substrate, and creating one or more network(s) of interconnected kinked nanostructures in the network plane, wherein a dielectric support layer is provided below the network plane to support said network(s) of interconnected nanostructures.Type: ApplicationFiled: June 27, 2016Publication date: July 12, 2018Inventors: Peter Krogstrup, Charles Marcus, Thomas Sand Jespersen, Jesper Nygård
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Publication number: 20170141285Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.Type: ApplicationFiled: July 2, 2015Publication date: May 18, 2017Inventors: Peter Krogstrup, Thomas Sand Jespersen, Charles M. Marcus, Jesper Nygård
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Publication number: 20170133576Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.Type: ApplicationFiled: March 4, 2015Publication date: May 11, 2017Inventors: Charles M. Marcus, Peter Krogstrup, Thomas Sand Jespersen, Jesper Nygård, Karl Petersson, Thorvald Larsen, Ferdinand Kuemmeth