Abstract: The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.

Abstract: The invention relates to an electrode (10) for photoelectric catalysis, comprising a supporting layer (1) on which a catalytic layer (2) is arranged, which comprises particles (3) from a first semiconductor material, and a method for the production of said electrode and a solar cell with said electrode. It is provided that the catalytic layer (2) further features a matrix (4) consisting of a second semiconductor material, which at least partially surrounds the particles.

Abstract: The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: (a) contacting a metal or metal oxide with an elementary halogen in a non-aqueous solvent, producing a metal halide compound in the solution, (b) applying a negative electric voltage to an electrically conducting or semiconducting substrate which is in contact with the solution from step (a), and (c) during and/or after step (b) contacting the substrate with an elementary chalcogen forming a metal chalcogenide layer on the substrate. The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.

Abstract: In order to investigate the reactants involved in a reaction between a gas and a solid by means of X-ray absorption spectroscopy an apparatus is provided which comprises, within a measuring chamber (2), a sample holder (23) for holding a sample (24) of the solid, means for forming an atmosphere of the gas in the measuring chamber under selectable pressure, a window (20) for the entry of X-rays for the irradiation of the sample (24) and a collector arrangement (21, 22) arranged spaced from the sample holder (23), in order to collect in the measuring chamber (2) electrons released by X-ray absorption. The collector arrangement comprises two collector electrodes (21 and 22) which are arranged mutually spaced from one another in sequence lengthwise along the X-ray path between the window (20) and the sample holder (23).