Abstract: A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.

Abstract: An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.

Abstract: A reference image for pattern recognition tasks is produced. Overlapping individual images are combined to form an overall image and the overall image is used as the reference image. This allows the size of reference images for fingerprints, for instance, which has hitherto been governed by the sensor area, to be increased. The recognition rate can thus be improved.

Abstract: A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materials, for example silicon oxide and silicon nitride. The respective thicknesses of the individual passivating layers can be adapted to dimensions of the structuring of the layer to which the passivation is applied. This produces a reliable passivation which is particularly suitable for capacitively measuring fingerprint sensors.

Abstract: A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.

Abstract: A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Abstract: An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.

Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.

Abstract: A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Abstract: A spacer layer (7) with a cavity (8) etched out therein and a diaphragm (2) arranged thereabove on the spacer layer are located on a silicon substrate (1) with a doped region (5) formed therein, whereby the doped region and the diaphragm are electrically connected via terminal contacts (4, 6) to electronic components (13) that are likewise integrated in the substrate (1). The electronic component are a component part of the operating circuit that can also be used for the drive of the diaphragm and for evaluating the diaphragm oscillations. The integration makes it possible to arrange the micromachined transducer components as array that can be electronically driven as phased array.

Abstract: A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.

Abstract: A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materials, for example silicon oxide and silicon nitride. The respective thicknesses of the individual passivating layers can be adapted to dimensions of the structuring of the layer to which the passivation is applied. This produces a reliable passivation which is particularly suitable for capacitively measuring fingerprint sensors.

Abstract: Method for manufacturing an absolute pressure sensor as micromechanical component on a silicon substrate, whereby a cavity (4) is etched out in an auxiliary layer (3) under a membrane layer (5) through etching openings (6), the etching openings are closed with a passivation layer (7), whereby a specific etching opening (11) is re-opened in a via hole etching and this opening is re-closed with a metallization or dielectric material (10, 12) in a following process step that ensues at low pressure.

Abstract: In a relative pressure sensor or miniaturized microphone as a micromechanical sensor component, a polysilicon membrane is arranged over a polysilicon membrane of an SOI substrate. A recess that is connected to the cavity between the membrane and the body silicon layer by openings in the body silicon layer is present in the substrate on the back side. Given an excursion of the membrane, a pressure equalization can therefore occur in the cavity as a result of these openings. The measurement occurs capacitatively by electrical connection of the electrically conductively doped membrane and a doped region formed in the body silicon layer.

Abstract: Rotation rate sensor as a micromechanical component in silicon, in which a ring with a rigid strut along a diameter is so suspended at elastic braces and anchoring arrangements on a substrate as to be able to perform rotation oscillations about its center axis and to be able to be tilted about the strut under the influence of outer torques. There are electrodes present at the ring and at the substrate, at which electrodes electrical voltages can be applied such that rotary oscillations of the ring about its center axis can be excited and rotary oscillations about the strut can be detected. To stabilize the position of the ring in the neutral position, additional electrodes can be provided at the ring and at the substrate for the generation of electrostatic forces.

Abstract: A semiconductor chip has a membrane mounted on supports that are held in the material of the chip so that the membrane is supported at a space from the chip. The membrane may be a metal layer. The supports are columns or webs that extend into the chip material. Electrical connections to the membrane may be made by conductive supports.

Abstract: A capacitance to be measured is connected together with three further capacitances to form a bridge circuit, in which each two of the capacitors are connected in series, and these two series circuits are connected in parallel to one another, and which replaces a part of the input stage of a .SIGMA.-.DELTA. modulator. As inputs of this bridge circuit, terminals are provided at the ends of these series circuits, and as outputs terminals are respectively provided between the capacitors connected one after the other in series. In a sensor realized thereby, two capacitively measuring sensor elements of the same type are used. These capacitors are built into the bridge circuit together with two equally large reference capacitors in such a way that exactly one measurement capacitor and one reference capacitor is La connected is connected to each input and to each output of the bridge circuit.

Abstract: In a method for manufacturing a combination of a pressure sensor and an electrochemical sensor, a basic structure for an ISFET is manufactured on a substrate made of silicon. After depositing a nitride layer as a pH-sensitive layer, the region of the ISFET is covered with a protective layer. In a region provided for a pressure sensor, a structured layer of polysilicon, provided as a membrane, is manufactured above a hollow space. Additional method steps for manufacturing electrical terminals of the sensors and, if required, additional integrated components, and for manufacturing printed conductor planes, are carried out in the context of a CMOS process. IMOX layers in the region of the gas sensor are wet-chemically removed down to the nitride layer. A platinum contact and an additional protective layer made of a PECVD oxide and a PECVD nitride are deposited. Additional layer structures for the gas sensor are manufactured.

Abstract: Micromechanically producible capacitively operating pressure sensor, in which there is a diaphragm, formed by a diaphragm layer (5), on a silicon substrate (1) over a hollow (4) in an auxiliary layer (3), and in which there is, on the side of the diaphragm averted from the hollow (4) and at a distance therefrom, an electrode formed by an electrode layer (8) with recesses (9) therein as a counter-electrode to the electrically conductive diaphragm layer (5). Given a rise in the external pressure, it is possible by applying a voltage between the diaphragm layer (5) and the electrode layer (8) to prevent the diaphragm from deflecting in the direction of the substrate, and to determine the magnitude of the pressure from the voltage required therefor.

Abstract: A component having a movable micro mechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.