Abstract: A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.

Abstract: A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.

Abstract: An electronic component includes a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point. The protective diode includes a first diode structure which is p-conductive and a second diode structure which is n-conductive. The first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region. The second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region. The first diode structure and the second diode structure overlap each other in a third overlap region.

Abstract: A filament includes a plurality of strings including radiation-emitting semiconductor chips electrically connected in series; and a plurality of contact structures to contact the strings, wherein the contact structures electrically connect to semiconductor chips at ends of the strings such that the strings are electrically drivable via the contact structures, and the filament is configured such that the strings are electrically drivable at least separately from one another via the contact structures.

Abstract: A filament includes a radiation-transmissive substrate, a plurality of LEDs, and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, the LEDs being arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, the converter layer is configured to obtain an improved radiation profile of the filament, along a lateral direction, the converter layer has a continuously varying vertical layer thickness, the lateral direction is a lateral longitudinal direction parallel to a main extension surface of the substrate, and the substrate has a length expanding along the lateral longitudinal direction that is greater than a width of the substrate along a lateral transverse direction.

Abstract: An electronic component is specified, with a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point, wherein the protective diode comprises a first diode structure which is p-conductive, the protective diode comprises a second diode structure which is n-conductive, the first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region, the second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region, and the first diode structure and the second diode structure overlap each other in a third overlap region.

Abstract: A filament includes a plurality of strings including radiation-emitting semiconductor chips electrically connected in series; and a plurality of contact structures to contact the strings, wherein the contact structures electrically connect to semiconductor chips at ends of the strings such that the strings are electrically drivable via the contact structures, and the filament is configured such that the strings are electrically drivable at least separately from one another via the contact structures.

Abstract: A filament includes a multiplicity of light-emitting semiconductor chips, wherein the semiconductor chips are arranged on a carrier, the semiconductor chips being electrically contacted, a scattering structure is configured to scatter light of the light-emitting semiconductor chips, the scattering structure is formed by structuring a surface, a converter covers the light-emitting semiconductor chips, and the structuring of the surface is formed on a surface of the converter.

Abstract: A filament includes a radiation-transmissive substrate, a plurality of LEDs, and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, the LEDs being arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, the converter layer is configured to obtain an improved radiation profile of the filament, along a lateral direction, the converter layer has a continuously varying vertical layer thickness, the lateral direction is a lateral longitudinal direction parallel to a main extension surface of the substrate, and the substrate has a length expanding along the lateral longitudinal direction that is greater than a width of the substrate along a lateral transverse direction.

Abstract: A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.

Abstract: A filament includes a radiation-transmissive substrate, a plurality of light emitting diodes and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, and the LEDs are arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, and the converter layer is configured to obtain an improved radiation profile of the filament such that the converter layer has a varying vertical layer thickness along a lateral direction, and/or the first sublayer and the second sublayer differ from one another in their geometry and/or material composition.

Abstract: A method for producing a plurality of radiation-emitting semiconductor components and a radiation-emitting semiconductor component are disclosed. In an embodiment a method includes providing an auxiliary carrier, applying a first structured wavelength converting layer to the auxiliary carrier comprising a plurality of structural elements, filling regions between the structural elements with a first reflective casting compound and applying a radiation-emitting semiconductor chip with its front side to one structural element of the first structured wavelength converting layer in each case.

Abstract: A filament includes a multiplicity of light-emitting semiconductor chips, wherein the semiconductor chips are arranged on a carrier, the semiconductor chips being electrically contacted, a scattering structure is configured to scatter light of the light-emitting semiconductor chips, the scattering structure is formed by structuring a surface, a converter covers the light-emitting semiconductor chips, and the structuring of the surface is formed on a surface of the converter.

Abstract: A filament includes a radiation-transmissive substrate, a plurality of light emitting diodes and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, and the LEDs are arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, and the converter layer is configured to obtain an improved radiation profile of the filament such that the converter layer has a varying vertical layer thickness along a lateral direction, and/or the first sublayer and the second sublayer differ from one another in their geometry and/or material composition.

Abstract: In various embodiments, a light emitting component is provided. The light emitting component includes a plurality of light emitting semiconductor chips. The semiconductor chips are arranged on at least one carrier. The semiconductor chips are electrically contacted. The light emitting component further includes a converter. The converter is configured to convert light in a first wavelength range, said light being emitted by at least one portion of the light emitting semiconductor chips, at least partly into light in a second wavelength range. The converter is formed separately from the at least one carrier.

Abstract: The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: —providing an auxiliary support wafer (1) having contact structures (4), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, —applying a plurality of radiation-emitting semiconductor bodies (5) to the contact structures (4), —encapsulating an least the contact structures (4) with a potting mass (10), and —removing the auxiliary support wafer (1). The invention further relates to an optoelectronic component.

Abstract: In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.

Abstract: A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Abstract: The invention relates to a method for modifying the content of one or a plurality of cells of a spread sheet or a report which is associated with a spread sheet having a number of cells which are displayed in rows and columns, comprising: detecting a user request to modify the content of one or a plurality of cells, when a user request has been recognized, retrieving and processing a predetermined entry from a storage medium, wherein the storage medium includes a number of different entries, which are processed consecutively, wherein, each time a user request has been recognized, a predetermined next entry is processed.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.