Abstract: An RF frontend integrated circuit (IC) device comprises one or more RF transceivers to transmit and receive RF signals within a first frequency band and a second frequency band that is higher than the first frequency band. The RF frontend IC device further comprises a bidirectional LO signal generation circuit coupled to the one or more transceivers to generate a bidirectional LO signal. The bidirectional LO signal is injected between the first frequency band and the second frequency band. The bidirectional LO signal generation circuit is to perform a high-side LO injection for the RF signals within the first frequency band by injecting the bidirectional LO signal having an LO frequency higher than the first frequency band and to perform a low-side LO injection for the RF signals within the second frequency band by injecting the bidirectional LO signal having the LO frequency lower than the second frequency band.

Abstract: An RF frontend integrated circuit (IC) device comprises one or more RF transceivers to transmit and receive RF signals within a first frequency band and a second frequency band that is higher than the first frequency band. The RF frontend IC device further comprises a bidirectional LO signal generation circuit coupled to the one or more transceivers to generate a bidirectional LO signal. The bidirectional LO signal is injected between the first frequency band and the second frequency band. The bidirectional LO signal generation circuit is to perform a high-side LO injection for the RF signals within the first frequency band by injecting the bidirectional LO signal having an LO frequency higher than the first frequency band and to perform a low-side LO injection for the RF signals within the second frequency band by injecting the bidirectional LO signal having the LO frequency lower than the second frequency band.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the frequency synthesizer are integrated within a single IC chip.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the frequency synthesizer are integrated within a single IC chip.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a full-band frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The full-band frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the full-band frequency synthesizer are integrated within a single IC chip.